发明申请
US20050003619A1 Nonvolatile semiconductor memory and manufacturing method for the same
失效
非易失性半导体存储器及其制造方法相同
- 专利标题: Nonvolatile semiconductor memory and manufacturing method for the same
- 专利标题(中): 非易失性半导体存储器及其制造方法相同
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申请号: US10717719申请日: 2003-11-21
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公开(公告)号: US20050003619A1公开(公告)日: 2005-01-06
- 发明人: Masayuki Tanaka , Atsuhiro Sato , Hiroki Yamashita , Ichiro Mizushima , Yoshio Ozawa
- 申请人: Masayuki Tanaka , Atsuhiro Sato , Hiroki Yamashita , Ichiro Mizushima , Yoshio Ozawa
- 申请人地址: JP Tokyo
- 专利权人: KABUSHIKI KAISHA TOSHIBA
- 当前专利权人: KABUSHIKI KAISHA TOSHIBA
- 当前专利权人地址: JP Tokyo
- 优先权: JP2003-192495 20030704
- 主分类号: H01L21/8247
- IPC分类号: H01L21/8247 ; H01L21/336 ; H01L27/115 ; H01L29/788 ; H01L29/792
摘要:
A semiconductor memory encompasses a memory cell matrix, which embraces device isolation films running along the column-direction, arranged alternatively between the cell columns; first conductive layers having top surfaces lower than the device isolation films; inter-electrode dielectrics arranged on the corresponding first conductive layers, the inter-electrode dielectric has a dielectric constant larger than that of silicon oxide; and second conductive layers running along the row-direction, each of the second conductive layers arranged on the inter-electrode dielectric and the device isolation films so that the second conductive layer can be shared by the memory cell transistors arranged along the row-direction belonging to different cell columns.