发明申请
US20050009273A1 Method and system for forming source regions in memory devices
失效
用于在存储器件中形成源区的方法和系统
- 专利标题： Method and system for forming source regions in memory devices
- 专利标题（中）： 用于在存储器件中形成源区的方法和系统
-
申请号： US10617470申请日： 2003-07-11
-
公开(公告)号： US20050009273A1公开(公告)日： 2005-01-13
- 发明人: Yi-Shing Chang , Wen-Ting Chu
- 申请人： Yi-Shing Chang , Wen-Ting Chu
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L21/8242 ; H01L21/8247 ; H01L27/115 ; H01L29/788
摘要：
A memory device and the method for manufacturing the same is disclosed. The device includes a first oxide layer on top of a substrate, a floating gate layer on top of the first oxide layer, and a second oxide layer over the floating gate layer. The second oxide layer and the floating gate layer have a first opening and a second opening respectively wherein the width of second opening is bigger than the width of the narrowest region of the first opening so that the floating gate layer is pulled back horizontally underneath the second oxide layer. A source region is in the substrate underneath the first oxide layer, and a third oxide layer fills in the first and second openings conforming to the contour thereof. The third oxide has a third opening to reach a portion of the source region. Further, a control gate material fills in the third opening.
公开/授权文献
信息查询
IPC分类:
