发明申请
US20050012228A1 Thin-film semiconductor substrate, method of manufacturing thin-film semiconductor substrate, method of crystallization, apparatus for crystallization, thin-film semiconductor device, and method of manufacturing thin-film semiconductor device
失效
薄膜半导体衬底，薄膜半导体衬底的制造方法，结晶方法，结晶装置，薄膜半导体器件以及制造薄膜半导体器件的方法
- 专利标题： Thin-film semiconductor substrate, method of manufacturing thin-film semiconductor substrate, method of crystallization, apparatus for crystallization, thin-film semiconductor device, and method of manufacturing thin-film semiconductor device
- 专利标题（中）： 薄膜半导体衬底，薄膜半导体衬底的制造方法，结晶方法，结晶装置，薄膜半导体器件以及制造薄膜半导体器件的方法
-
申请号： US10879165申请日： 2004-06-30
-
公开(公告)号： US20050012228A1公开(公告)日： 2005-01-20
- 发明人: Masato Hiramatsu , Yoshinobu Kimura , Hiroyuki Ogawa , Masayuki Jyumonji , Masakiyo Matsumura
- 申请人： Masato Hiramatsu , Yoshinobu Kimura , Hiroyuki Ogawa , Masayuki Jyumonji , Masakiyo Matsumura
- 优先权： JP2003-197824 20030716
- 主分类号： H01L29/786
- IPC分类号： H01L29/786 ; H01L23/544
摘要：
A thin-film semiconductor substrate includes an insulative substrate, an amorphous semiconductor thin film that is formed on the insulative substrate, and a plurality of alignment marks that are located on the semiconductor thin film and are indicative of reference positions for crystallization.
信息查询
IPC分类:
