公开(公告)号：US07537660B2

公开(公告)日：2009-05-26

申请号：US11442331

申请日：2006-05-30

申请人： Yukio Taniguchi ,  Masakiyo Matsumura ,  Hirotaka Yamaguchi ,  Mikihiko Nishitani ,  Susumu Tsujikawa ,  Yoshinobu Kimura ,  Masayuki Jyumonji

发明人： Yukio Taniguchi ,  Masakiyo Matsumura ,  Hirotaka Yamaguchi ,  Mikihiko Nishitani ,  Susumu Tsujikawa ,  Yoshinobu Kimura ,  Masayuki Jyumonji

IPC分类号： C30B25/04

CPC分类号： G03B21/56 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008 ,  Y10T117/1012

摘要： A crystallization method includes wavefront-dividing an incident light beam into a plurality of light beams, condensing the wavefront-divided light beams in a corresponding phase shift portion of a phase shift mask or in the vicinity of the phase shift portion to form a light beam having an light intensity distribution of an inverse peak pattern in which a light intensity is minimum in a point corresponding to the phase shift portion of the phase shift mask, and irradiating a polycrystalline semiconductor film or an amorphous semiconductor film with the light beam having the light intensity distribution to produce a crystallized semiconductor film.

摘要翻译： 结晶方法包括将入射光束波前分割成多个光束，将波前划分的光束聚集在相移掩模的相应相移部分中或在相移部分附近以形成光束 具有在与相移掩模的相移部分相对应的点中光强度最小的逆峰值图案的光强度分布，以及用具有光的光束照射多晶半导体膜或非晶半导体膜 强度分布以产生结晶的半导体膜。

公开(公告)号：US07505204B2

公开(公告)日：2009-03-17

申请号：US11861885

申请日：2007-09-26

申请人： Yukio Taniguchi ,  Masakiyo Matsumura ,  Hirotaka Yamaguchi ,  Mikihiko Nishitani ,  Susumu Tsujikawa ,  Yoshinobu Kimura ,  Masayuki Jyumonji

发明人： Yukio Taniguchi ,  Masakiyo Matsumura ,  Hirotaka Yamaguchi ,  Mikihiko Nishitani ,  Susumu Tsujikawa ,  Yoshinobu Kimura ,  Masayuki Jyumonji

IPC分类号： G02B5/30

CPC分类号： H01L29/78675 ,  B23K26/066 ,  B23K26/073 ,  B23K26/0734 ,  G02B5/02 ,  G02B5/3083 ,  G03F1/28 ,  G03F1/34 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/02686 ,  H01L27/1285 ,  H01L29/66757 ,  Y10T117/10

摘要： A crystallization apparatus includes an illumination system which applies illumination light for crystallization to a non-single-crystal semiconductor film, and a phase shifter which includes first and second regions disposed to form a straight boundary and transmitting the illumination light from the illumination system by a first phase retardation therebetween, and phase-modulates the illumination light to provide a light intensity distribution having an inverse peak pattern that light intensity falls in a zone of the non-single-crystal semiconductor film containing an axis corresponding to the boundary. The phase shifter further includes a small region which extends into at least one of the first and second regions from the boundary and transmits the illumination light by a second phase retardation with respect to the at least one of the first and second regions.

摘要翻译： 结晶装置包括：向非单晶半导体膜施加用于结晶的照明光的照明系统;以及移相器，其包括设置成形成直边界的第一和第二区域，并将来自照明系统的照明光透过 第一相位相位差，并且对照明光进行相位调制，以提供具有光强度落在包含对应于边界的轴的非单晶半导体膜的区域中的反峰值图案的光强度分布。 移相器还包括从边界延伸到第一和第二区域中的至少一个区域的小区域，并相对于第一和第二区域中的至少一个透射照明光第二相位延迟。

公开(公告)号：US07352002B2

公开(公告)日：2008-04-01

申请号：US11403938

申请日：2006-04-14

申请人： Yoshinobu Kimura ,  Masakiyo Matsumura ,  Yoshitaka Yamamoto ,  Mikihiko Nishitani ,  Masato Hiramatsu ,  Masayuki Jyumonji ,  Fumiki Nakano

发明人： Yoshinobu Kimura ,  Masakiyo Matsumura ,  Yoshitaka Yamamoto ,  Mikihiko Nishitani ,  Masato Hiramatsu ,  Masayuki Jyumonji ,  Fumiki Nakano

IPC分类号： H01L29/04

CPC分类号： H01L21/02686 ,  H01L21/02532 ,  H01L21/2026 ,  H01L29/66757 ,  H01L29/78675

摘要： A method of manufacturing a thin-film semiconductor device substrate includes a step of forming a non-single crystalline semiconductor thin film on a base layer, and an annealing step of irradiating the non-single crystalline semiconductor thin film with an energy beam to enhance crystallinity of a non-single crystalline semiconductor constituting the non-single crystalline semiconductor thin film. The annealing step includes simultaneously irradiating the non-single crystalline semiconductor thin film with a plurality of energy beams to form a plurality of unit regions each including at least one irradiated region irradiated with the energy beam and at least one non-irradiated region that is not irradiated with the energy beam.

摘要翻译： 制造薄膜半导体器件衬底的方法包括在基底层上形成非单晶半导体薄膜的步骤和用能量束照射非单晶半导体薄膜以提高结晶度的退火步骤 构成非单晶半导体薄膜的非单晶半导体。 退火步骤包括同时用多个能量束照射非单晶半导体薄膜，以形成多个单位区域，每个单位区域包括至少一个被能量束照射的照射区域和至少一个不照射的非照射区域 用能量束照射。

公开(公告)号：US07157677B2

公开(公告)日：2007-01-02

申请号：US11178562

申请日：2005-07-12

申请人： Masayuki Jyumonji ,  Masakiyo Matsumura ,  Yukio Taniguchi ,  Masato Hiramatsu ,  Hiroyuki Ogawa ,  Noritaka Akita

发明人： Masayuki Jyumonji ,  Masakiyo Matsumura ,  Yukio Taniguchi ,  Masato Hiramatsu ,  Hiroyuki Ogawa ,  Noritaka Akita

IPC分类号： G02B7/04 ,  G02B27/40 ,  G02B27/64

CPC分类号： G02B27/40 ,  B23K26/705 ,  G01J1/04 ,  G01J1/0411 ,  G01J1/0448 ,  G01J1/4257 ,  G02B7/36

摘要： A knife edge is disposed at a height corresponding to a section on which a sectional image (light intensity distribution) is picked up in such a manner as to intercept a part of the section of the laser light. The knife edge is irradiated with the laser light, and the sectional image of the laser light is enlarged with an image forming optics, and is picked up by a CCD. While picking up the sectional image in this manner, focusing of the image forming optics is performed. Next, the knife edge is retracted from the optical path of the laser light, the laser light is allowed to enter the CCD via the image forming optics, and the sectional image of the laser light is picked up.

摘要翻译： 刀刃设置在与截面图像（光强度分布）被拾取的部分相对应的高度处，以截取激光的一部分的一部分。 用激光照射刀刃，用成像光学元件放大激光的截面图像，并用CCD拾取。 以这种方式拾取截面图像时，执行成像光学元件的聚焦。 接下来，刀刃从激光的光路缩回，允许激光经由图像形成光学器件进入CCD，并且拾取激光的截面图像。

公开(公告)号：US20060177973A1

公开(公告)日：2006-08-10

申请号：US11275961

申请日：2006-02-07

申请人： Yukio TANIGUCHI ,  Hiroyuki Ogawa ,  Masayuki Jyumonji ,  Noritaka Akita ,  Masakiyo Matsumura

发明人： Yukio TANIGUCHI ,  Hiroyuki Ogawa ,  Masayuki Jyumonji ,  Noritaka Akita ,  Masakiyo Matsumura

IPC分类号： H01L21/84 ,  H01L21/00

CPC分类号： H01L21/02667 ,  B23K26/0604 ,  B23K26/066 ,  G02B19/0014 ,  G02B19/0052 ,  G02B19/0095 ,  G02B27/0961 ,  G02B27/0988 ,  H01L21/02686 ,  H01L21/2026 ,  H01L27/1285

摘要： A generation method of a light intensity distribution uses a first light modulation element and a second light modulation element which are arranged to be apart from each other by a distance D and face each other in parallel to optically modulate a light beam which enters the light modulation elements, thereby generating a light intensity distribution on a target surface. The first light modulation element has a pattern formed by repeating a basic unit having a pitch P. The distance D is set to a distance with which the light intensity distribution generated on the predetermined surface is not changed even if a relative position of the first light modulation element and the second light modulation element is shifted in a plane direction.

摘要翻译： 光强分布的产生方法使用第一光调制元件和第二光调制元件，其被布置为彼此分开距离D并且彼此并行布置以光学地调制进入光调制的光束 从而在目标表面上产生光强度分布。 第一光调制元件具有通过重复具有间距P的基本单元形成的图案。距离D被设定为在预定表面上产生的光强度分布不改变的距离，即使第一光的相对位置 调制元件和第二光调制元件在平面方向上移位。

公开(公告)号：US20060065644A1

公开(公告)日：2006-03-30

申请号：US11099563

申请日：2005-04-06

申请人： Masayuki Jyumonji ,  Masato Hiramatsu ,  Masakiyo Matsumura

发明人： Masayuki Jyumonji ,  Masato Hiramatsu ,  Masakiyo Matsumura

IPC分类号： B23K26/00

CPC分类号： H01L21/02675 ,  B23K26/702 ,  G01J1/429 ,  G01J1/58 ,  H01L21/2026

摘要： An amorphous silicon layer is deposited on a glass substrate via an underlayer insulating film, and further a light-emitting layer is inserted between the glass substrate and the underlayer insulating film in a partial region on the glass substrate. To measure light intensity distribution of laser light applied to the amorphous silicon layer, the laser light is applied to the light-emitting layer from the surface of a substrate to be treated. The light intensity distribution of the light emitted from the light-emitting layer is two-dimensionally imaged using an optical image pickup system from the back surface of the substrate to be treated, and measured using an image pickup device. The light intensity distribution of the laser light in the face to be treated is obtained from the light intensity distribution of the emission measured in this manner.

摘要翻译： 通过下层绝缘膜在玻璃基板上沉积非晶硅层，并且在玻璃基板上的部分区域中，还在玻璃基板和下层绝缘膜之间插入发光层。 为了测量施加到非晶硅层的激光的光强度分布，激光从待处理的基板的表面施加到发光层。 从发光层发射的光的光强度分布使用光学图像拾取系统从待处理的基板的后表面二维成像，并使用图像拾取装置进行测量。 从被处理面的激光的光强度分布是从这样测定的发光的光强度分布得到的。

公开(公告)号：US07001461B2

公开(公告)日：2006-02-21

申请号：US10656202

申请日：2003-09-08

申请人： Yukio Taniguchi ,  Masakiyo Matsumura ,  Hirotaka Yamaguchi ,  Mikihiko Nishitani ,  Susumu Tsujikawa ,  Yoshinobu Kimura ,  Masayuki Jyumonji

发明人： Yukio Taniguchi ,  Masakiyo Matsumura ,  Hirotaka Yamaguchi ,  Mikihiko Nishitani ,  Susumu Tsujikawa ,  Yoshinobu Kimura ,  Masayuki Jyumonji

IPC分类号： C30B5/00 ,  G03F1/00 ,  H01L21/20

CPC分类号： H01L29/78675 ,  B23K26/066 ,  B23K26/073 ,  B23K26/0734 ,  G02B5/02 ,  G02B5/3083 ,  G03F1/28 ,  G03F1/34 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/02686 ,  H01L27/1285 ,  H01L29/66757 ,  Y10T117/10

摘要： A crystallization apparatus includes an illumination system which applies illumination light for crystallization to a non-single-crystal semiconductor film, and a phase shifter which includes first and second regions disposed to form a straight boundary and transmitting the illumination light from the illumination system by a first phase retardation therebetween, and phase-modulates the illumination light to provide a light intensity distribution having an inverse peak pattern that light intensity falls in a zone of the non-single-crystal semiconductor film containing an axis corresponding to the boundary. The phase shifter further includes a small region which extends into at least one of the first and second regions from the boundary and transmits the illumination light by a second phase retardation with respect to the at least one of the first and second regions.

公开(公告)号：US20050161676A1

公开(公告)日：2005-07-28

申请号：US11062560

申请日：2005-02-23

申请人： Yoshinobu Kimura ,  Masakiyo Matsumura ,  Mikihiko Nishitani ,  Masato Hiramatsu ,  Masayuki Jyumonji ,  Yoshitaka Yamamoto ,  Hideo Koseki

发明人： Yoshinobu Kimura ,  Masakiyo Matsumura ,  Mikihiko Nishitani ,  Masato Hiramatsu ,  Masayuki Jyumonji ,  Yoshitaka Yamamoto ,  Hideo Koseki

IPC分类号： H01L21/20 ,  H01L21/268 ,  H01L21/336 ,  H01L29/786 ,  H01L31/113

CPC分类号： H01L21/02675 ,  H01L21/02532 ,  H01L21/268 ,  H01L29/66757 ,  H01L29/78675

摘要： A method for producing a thin film semiconductor device is described. In the method, a thin film layer of non-single-crystalline semiconductor, which is deposited on a base layer of glass, is processed to an island-shaped thin film layer at the time prior to the layer irradiation step. The laser irradiation to the thin film layer of non-single-crystalline semiconductor is carried out after forming an insulation film layer and a gate electrode over the island-shaped thin film layer, by using the gate electrode as the irradiation mask, whereby the center area of the island-shaped thin film layer masked by the gate electrode is crystallized, and simultaneously, the both side areas thereof which is not masked by the gate electrode are annealed. Next, a source electrode and a drain electrode is formed in the annealed areas. The implantation of impurity ion may be carried out either before or after the laser irradiation. By the above order of steps, it becomes possible to obtain a thin film semiconductor device which has small numbers of crystals and less variance of grain size of crystals for each unit of electric circuit, compared with a device produced by the conventional process. Further, the process makes it possible to be even the boundary surface between the crystallized layer and the insulation layer in a device.

摘要翻译： 对薄膜半导体器件的制造方法进行说明。 在该方法中，沉积在玻璃基底层上的非单晶半导体薄膜层在层照射步骤之前被处理成岛形薄膜层。 通过使用栅电极作为照射掩模，在岛状薄膜层上形成绝缘膜层和栅电极之后，对非单晶半导体的薄膜层进行激光照射，由此中心 由栅电极掩蔽的岛状薄膜层的区域被结晶化，同时，未被栅极电极掩蔽的两侧区域退火。 接下来，在退火区域中形成源电极和漏电极。 杂质离子的注入可以在激光照射之前或之后进行。 通过上述步骤，与通过常规方法制造的器件相比，可以获得每个电路单元具有少量晶体和较小晶体粒径变化的薄膜半导体器件。 此外，该方法使得可以在器件中甚至结晶层和绝缘层之间的边界面。

公开(公告)号：US20090223941A1

公开(公告)日：2009-09-10

申请号：US12469345

申请日：2009-05-20

申请人： Masayuki JYUMONJI

发明人： Masayuki JYUMONJI

IPC分类号： B23K26/00 ,  B23K26/06

CPC分类号： B23K26/066 ,  H01L21/02678 ,  H01L27/1285 ,  H01L27/1296 ,  Y10T117/1004

摘要： An object of the present invention is to provide a phase shifter for laser annealing which is capable of effectively preventing the sticking of particles. A first layer and a third layer are made of quartz glass, and a two-dimensional pattern of fine grooves is formed in the surfaces of the layers. The first layer and the third layer are arranged so that a second layer is sandwiched between the layers in a state in which the surfaces provided with the grooves face each other. A peripheral edge portion of the first layer is laminated on that of the third layer by a spacer. The second layer is made of an inactive gas introduced between the first layer and the third layer.

摘要翻译： 本发明的目的是提供一种能够有效防止颗粒粘附的激光退火用移相器。 第一层和第三层由石英玻璃制成，并且在这些层的表面中形成微细凹槽的二维图案。 第一层和第三层被布置成使得在设置有沟槽的表面彼此面对的状态下，第二层被夹在层之间。 第一层的外围边缘部分通过间隔件层压在第三层的边缘部分上。 第二层由在第一层和第三层之间引入的惰性气体制成。

公开(公告)号：US20090181483A1

公开(公告)日：2009-07-16

申请号：US12403776

申请日：2009-03-13

申请人： Yukio Taniguchi ,  Masakiyo Matsumura ,  Hirotaka Yamaguchi ,  Mikihiko Nishitani ,  Susumu Tsujikawa ,  Yoshinobu Kimura ,  Masayuki Jyumonji

发明人： Yukio Taniguchi ,  Masakiyo Matsumura ,  Hirotaka Yamaguchi ,  Mikihiko Nishitani ,  Susumu Tsujikawa ,  Yoshinobu Kimura ,  Masayuki Jyumonji

IPC分类号： H01L21/336 ,  H01L21/26 ,  H01L21/78

CPC分类号： G03B21/56 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008 ,  Y10T117/1012

摘要： A crystallization method includes wavefront-dividing an incident light beam into a plurality of light beams, condensing the wavefront-divided light beams in a corresponding phase shift portion of a phase shift mask or in the vicinity of the phase shift portion to form a light beam having an light intensity distribution of an inverse peak pattern in which a light intensity is minimum in a point corresponding to the phase shift portion of the phase shift mask, and irradiating a polycrystalline semiconductor film or an amorphous semiconductor film with the light beam having the light intensity distribution to produce a crystallized semiconductor film.