公开(公告)号：US08034696B2

公开(公告)日：2011-10-11

申请号：US11802048

申请日：2007-05-18

申请人： Ryuta Tsuchiya ,  Yoshinobu Kimura ,  Yusuke Morita

发明人： Ryuta Tsuchiya ,  Yoshinobu Kimura ,  Yusuke Morita

IPC分类号： H01L21/20

CPC分类号： C30B23/00 ,  C30B25/00

摘要： It is an object of the present invention to provide a method of manufacturing an SOI wafer at low cost and with high yield. It is another object of the present invention to provide a semiconductor device including also bulk type MISFETs used as high voltage regions and a method of manufacturing the same without using complicated processes and increasing the size of a semiconductor chip.The method of manufacturing a semiconductor device comprises selectively epitaxially growing a single-crystal Si layer and continuously performing the epitaxial growth without bringing a substrate temperature increased during the growth to room temperature even once. An epitaxially grown surface is then etched and planarized. The substrate temperature is then cooled down to the room temperature.

摘要翻译： 本发明的目的是提供一种以低成本和高产率制造SOI晶片的方法。 本发明的另一个目的是提供一种半导体器件，其还包括用作高电压区域的体型型MISFET及其制造方法，而不需要使用复杂的工艺并增加半导体芯片的尺寸。 制造半导体器件的方法包括选择性地外延生长单晶Si层并连续进行外延生长，而不会使基板温度在生长至室温期间增加甚至一次。 然后将外延生长的表面蚀刻并平坦化。 然后将衬底温度冷却至室温。

公开(公告)号：US07838379B2

公开(公告)日：2010-11-23

申请号：US12362277

申请日：2009-01-29

申请人： Masaharu Kinoshita ,  Motoyasu Terao ,  Hideyuki Matsuoka ,  Yoshitaka Sasago ,  Yoshinobu Kimura ,  Akio Shima ,  Mitsuharu Tai ,  Norikatsu Takaura

发明人： Masaharu Kinoshita ,  Motoyasu Terao ,  Hideyuki Matsuoka ,  Yoshitaka Sasago ,  Yoshinobu Kimura ,  Akio Shima ,  Mitsuharu Tai ,  Norikatsu Takaura

IPC分类号： H01L21/20

CPC分类号： H01L21/8221 ,  G11C11/5678 ,  G11C13/0004 ,  G11C2213/71 ,  G11C2213/72 ,  H01L27/101 ,  H01L27/1285 ,  H01L27/2409 ,  H01L27/2481 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/1675

摘要： In a phase change memory, electric property of a diode used as a selection device is extremely important. However, since crystal grain boundaries are present in the film of a diode using polysilicon, it involves a problem that the off leak property varies greatly making it difficult to prevent erroneous reading. For overcoming the problem, the present invention provides a method of controlling the temperature profile of an amorphous silicon in the laser annealing for crystallizing and activating the amorphous silicon thereby controlling the crystal grain boundaries. According to the invention, variation in the electric property of the diode can be decreased and the yield of the phase-change memory can be improved.

摘要翻译： 在相变存储器中，用作选择装置的二极管的电特性非常重要。 然而，由于在使用多晶硅的二极管的膜中存在晶界，所以存在泄漏特性变化很大的问题，难以防止误读。 为了解决这个问题，本发明提供了一种在激光退火中控制非晶硅的温度分布的方法，用于结晶和激活非晶硅，从而控制晶界。 根据本发明，可以降低二极管的电性能的变化，并且可以提高相变存储器的产量。

公开(公告)号：US20100169687A1

公开(公告)日：2010-07-01

申请号：US12543019

申请日：2009-08-18

申请人： Yoshinobu Kimura

发明人： Yoshinobu Kimura

IPC分类号： G06F1/32 ,  G06F1/04 ,  G06F12/00

CPC分类号： G06F1/3237 ,  G06F1/3221 ,  G06F1/3268 ,  G06F12/0804 ,  G06F12/0866 ,  G06F2212/214 ,  Y02D10/128 ,  Y02D10/154 ,  Y02D50/20

摘要： A data storage device includes a first nonvolatile memory, a second volatile memory that temporarily stores therein data to be transferred between a host device and the first memory, a first control unit that controls the second memory, a second control unit that controls data transfer between the first control unit and the first memory, a third control unit that controls data transfer between the host device and the first control unit, and a clock stop unit that stops a clock signal supplied to the first to third control units in conjunction with a power consumption control of the third control unit to perform a power saving control.

摘要翻译： 数据存储装置包括第一非易失性存储器，暂时存储要在主机设备和第一存储器之间传送的数据的第二易失性存储器，控制第二存储器的第一控制单元，控制第二存储器的第二控制单元， 第一控制单元和第一存储器，控制主机设备和第一控制单元之间的数据传输的第三控制单元，以及停止提供给第一至第三控制单元的时钟信号的时钟停止单元， 第三控制单元的消耗控制进行省电控制。

公开(公告)号：US07692864B2

公开(公告)日：2010-04-06

申请号：US12403726

申请日：2009-03-13

申请人： Yukio Taniguchi ,  Masakiyo Matsumura ,  Hirotaka Yamaguchi ,  Mikihiko Nishitani ,  Susumu Tsujikawa ,  Yoshinobu Kimura ,  Masayuki Jyumonji

发明人： Yukio Taniguchi ,  Masakiyo Matsumura ,  Hirotaka Yamaguchi ,  Mikihiko Nishitani ,  Susumu Tsujikawa ,  Yoshinobu Kimura ,  Masayuki Jyumonji

IPC分类号： G02B27/10

CPC分类号： G03B21/56 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008 ,  Y10T117/1012

摘要： A crystallization method includes wavefront-dividing an incident light beam into a plurality of light beams, condensing the wavefront-divided light beams in a corresponding phase shift portion of a phase shift mask or in the vicinity of the phase shift portion to form a light beam having an light intensity distribution of an inverse peak pattern in which a light intensity is minimum in a point corresponding to the phase shift portion of the phase shift mask, and irradiating a polycrystalline semiconductor film or an amorphous semiconductor film with the light beam having the light intensity distribution to produce a crystallized semiconductor film.

摘要翻译： 结晶方法包括将入射光束波前分割成多个光束，将波前划分的光束聚集在相移掩模的相应相移部分中或在相移部分附近以形成光束 具有在与相移掩模的相移部分相对应的点中光强度最小的逆峰值图案的光强度分布，以及用具有光的光束照射多晶半导体膜或非晶半导体膜 强度分布以产生结晶的半导体膜。

公开(公告)号：US07572335B2

公开(公告)日：2009-08-11

申请号：US10958396

申请日：2004-10-06

申请人： Yukio Taniguchi ,  Masakiyo Matsumura ,  Hirotaka Yamaguchi ,  Mikihiko Nishitani ,  Susumu Tsujikawa ,  Yoshinobu Kimura ,  Masayuki Jyumonji

发明人： Yukio Taniguchi ,  Masakiyo Matsumura ,  Hirotaka Yamaguchi ,  Mikihiko Nishitani ,  Susumu Tsujikawa ,  Yoshinobu Kimura ,  Masayuki Jyumonji

IPC分类号： C30B35/00

CPC分类号： H01L21/02678 ,  B23K26/066 ,  H01L21/2026 ,  H01L21/268 ,  H01L29/66757 ,  H01L29/78675 ,  Y10S117/90 ,  Y10S117/904 ,  Y10S117/905 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008

摘要： A crystallization apparatus includes an illumination system which illuminates a phase-shift mask and an image-forming optical system arranged in an optical path between the phase-shift mask and a semiconductor film. The semiconductor film is irradiated with a light beam having a light intensity distribution of inverted peak patterns whose light intensity is the lowest in portions corresponding to phase shift sections to form a crystallized semiconductor film. The image-forming optical system is located to optically conjugate the phase-shift mask and the semiconductor film and has an aberration corresponding to the given wavelength range to form a light intensity distribution of inverted peak patterns with no swell of intensity in the middle portion.

摘要翻译： 结晶装置包括照射相移掩模的照明系统和布置在相移掩模和半导体膜之间的光路中的成像光学系统。 用对应于相移部分的部分的光强度最低的具有反相峰值图案的光强度分布的光束照射半导体膜，以形成结晶的半导体膜。 成像光学系统被定位为将相移掩模和半导体膜光学共轭，并且具有对应于给定波长范围的像差，以形成中间部分没有强度波动的反向峰值图案的光强度分布。

公开(公告)号：US20090189137A1

公开(公告)日：2009-07-30

申请号：US12362277

申请日：2009-01-29

申请人： Masaharu Kinoshita ,  Motoyasu Terao ,  Hideyuki Matsuoka ,  Yoshitaka Sasago ,  Yoshinobu Kimura ,  Akio Shima ,  Mitsuharu Tai ,  Norikatsu Takaura

发明人： Masaharu Kinoshita ,  Motoyasu Terao ,  Hideyuki Matsuoka ,  Yoshitaka Sasago ,  Yoshinobu Kimura ,  Akio Shima ,  Mitsuharu Tai ,  Norikatsu Takaura

IPC分类号： H01L47/00

CPC分类号： H01L21/8221 ,  G11C11/5678 ,  G11C13/0004 ,  G11C2213/71 ,  G11C2213/72 ,  H01L27/101 ,  H01L27/1285 ,  H01L27/2409 ,  H01L27/2481 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/1675

摘要： In a phase change memory, electric property of a diode used as a selection device is extremely important. However, since crystal grain boundaries are present in the film of a diode using polysilicon, it involves a problem that the off leak property varies greatly making it difficult to prevent erroneous reading. For overcoming the problem, the present invention provides a method of controlling the temperature profile of an amorphous silicon in the laser annealing for crystallizing and activating the amorphous silicon thereby controlling the crystal grain boundaries. According to the invention, variation in the electric property of the diode can be decreased and the yield of the phase-change memory can be improved.

摘要翻译： 在相变存储器中，用作选择装置的二极管的电特性非常重要。 然而，由于在使用多晶硅的二极管的膜中存在晶界，所以存在泄漏特性变化很大的问题，难以防止误读。 为了解决这个问题，本发明提供了一种在激光退火中控制非晶硅的温度分布的方法，用于结晶和激活非晶硅，从而控制晶界。 根据本发明，可以降低二极管的电性能的变化，并且可以提高相变存储器的产量。

公开(公告)号：US07491264B2

公开(公告)日：2009-02-17

申请号：US10582879

申请日：2005-02-15

申请人： Shinichi Tao ,  Yoshinobu Kimura ,  Satoshi Inomoto

发明人： Shinichi Tao ,  Yoshinobu Kimura ,  Satoshi Inomoto

IPC分类号： C01B13/02 ,  B01D53/04

CPC分类号： C01B13/0259 ,  B01D53/0438 ,  B01D53/0446 ,  B01D2253/108 ,  B01D2256/12 ,  B01D2257/102 ,  B01D2259/4533 ,  B01D2259/455 ,  C01B2210/0046

摘要： An oxygen concentrating apparatus (10) has an oxygen concentrating unit (12), a compressor (26) for supplying compressed air to the oxygen concentrating unit (12) and a compressor housing (28) for accommodating the compressor (26). The compressor housing (28) includes a plurality of air inlet ports (28a) for introducing the air into the compressor housing (28) and an air outlet opening (28b) for discharging the air from the compressor housing (28). A cooling fan (30) is mounted on the compressor housing (28) at the air outlet opening (28b) for drawing the air from the compressor housing (28). The air inlet ports (28a) are disposed adjacent to the side wall of the compressor (26) to direct the air flow induced by the cooling fan perpendicularly to the side wall of the compressor (26). The capacity of the cooling fan (30) and the diameter of the air inlet ports (28a) are selected to ensure the velocity of the air flow through the air inlet ports (28a) is equal to or lower than 15 m/sec.

摘要翻译： 氧浓缩装置（10）具有氧浓缩装置（12），用于向氧浓缩装置（12）供给压缩空气的压缩机（26）和用于容纳压缩机（26）的压缩机壳体（28）。 压缩机壳体（28）包括用于将空气引入压缩机壳体（28）的多个空气入口（28a）和用于从压缩机壳体（28）排出空气的空气出口开口（28b）。 在空气出口开口（28b）处的压缩机壳体（28）上安装有用于从压缩机壳体（28）抽出空气的冷却风扇（30）。 空气入口（28a）邻近压缩机（26）的侧壁设置，以引导由冷却风扇引起的空气流与压缩机（26）的侧壁垂直。 选择冷却风扇（30）的容积和空气入口（28a）的直径以确保通过空气入口（28a）的空气流的速度等于或低于15m / sec。

公开(公告)号：US20080289573A1

公开(公告)日：2008-11-27

申请号：US12166997

申请日：2008-07-02

申请人： Masayuki JYUMONJI ,  Hiroyuki Ogawa ,  Masakiyo Matsumura ,  Masato Hiramatsu ,  Yoshinobu Kimura ,  Yukio Taniguchi ,  Tomoya Kato

发明人： Masayuki JYUMONJI ,  Hiroyuki Ogawa ,  Masakiyo Matsumura ,  Masato Hiramatsu ,  Yoshinobu Kimura ,  Yukio Taniguchi ,  Tomoya Kato

IPC分类号： B05B5/00

CPC分类号： H01L21/02678 ,  B23K26/0622 ,  B23K26/064 ,  B23K26/0648 ,  B23K26/066 ,  C30B13/24 ,  H01L21/02686 ,  H01L21/2026 ,  H01L27/1285 ,  H01L29/66757 ,  H01L29/78675 ,  Y10T117/1004 ,  Y10T117/1008

摘要： There are provided a crystallization method which can design laser beam having a light intensity and a distribution optimized on an incident surface of a substrate, form a desired crystallized structure while suppressing generation of any other undesirable structure area and satisfy a demand for low-temperature processing, a crystallization apparatus, a thin film transistor and a display apparatus. When crystallizing a non-single-crystal semiconductor thin film by irradiating laser beam thereto, irradiation light beam to the non-single-crystal semiconductor thin film have a light intensity with a light intensity distribution which cyclically repeats a monotonous increase and a monotonous decrease and a light intensity which melts the non-single-crystal semiconductor. Further, at least a silicon oxide film is provided on a laser beam incident surface of the non-single-crystal semiconductor film.

摘要翻译： 提供了一种结晶方法，其可以设计具有在基板的入射表面上优化的光强度和分布的激光束，形成期望的结晶结构，同时抑制任何其它不希望的结构面积的产生并满足对低温加工的需求 ，结晶装置，薄膜​​晶体管和显示装置。 当通过照射激光束使非单晶半导体薄膜结晶时，对非单晶半导体薄膜的照射光束具有光强度分布的光强度，其周期性地重复单调增加和单调减少， 熔融非单晶半导体的光强度。 此外，在非单晶半导体膜的激光入射面上至少设置氧化硅膜。

公开(公告)号：US07436046B2

公开(公告)日：2008-10-14

申请号：US11242961

申请日：2005-10-05

申请人： Masao Kondo ,  Nobuyuki Sugii ,  Yoshinobu Kimura

发明人： Masao Kondo ,  Nobuyuki Sugii ,  Yoshinobu Kimura

IPC分类号： H01L31/117

CPC分类号： H01L29/7835 ,  H01L29/1054 ,  H01L29/165 ,  H01L29/6659 ,  H01L29/66659

摘要： Provided is a technology capable of suppressing a reduction in electron mobility in a channel region formed in a strained silicon layer. A p type strained silicon layer is formed over a p type silicon-germanium layer formed over a semiconductor substrate. The p type strained layer has a thickness adjusted to be thicker than the critical film thickness at which no misfit dislocation occurs. Accordingly, misfit dislocations occur in the vicinity of the interface between the p type strained silicon layer and p type silicon-germanium layer. At a position which is below the end of a gate electrode and at which misfit dislocations occur, the impurity concentration of the n type strained silicon layer and n type silicon-germanium layer is 1×1019 cm−3 or less.

摘要翻译： 提供了能够抑制形成在应变硅层中的沟道区域中的电子迁移率降低的技术。 在半导体衬底上形成的p型硅 - 锗层上形成p型应变硅层。 p型应变层的厚度被调整为比没有失配位错发生的临界膜厚度更厚。 因此，在p型应变硅层和p型硅 - 锗层之间的界面附近发生失配位错。 在位于栅电极末端并发生失配位错的位置处，n型应变硅层和n型硅 - 锗层的杂质浓度为1×10 19 cm -3， -3以下。

公开(公告)号：US07413608B2

公开(公告)日：2008-08-19

申请号：US11224014

申请日：2005-09-13

申请人： Yukio Taniguchi ,  Masakiyo Matsumura ,  Hirotaka Yamaguchi ,  Mikihiko Nishitani ,  Susumu Tsujikawa ,  Yoshinobu Kimura ,  Masayuki Jyumonji

发明人： Yukio Taniguchi ,  Masakiyo Matsumura ,  Hirotaka Yamaguchi ,  Mikihiko Nishitani ,  Susumu Tsujikawa ,  Yoshinobu Kimura ,  Masayuki Jyumonji

IPC分类号： C30B25/12 ,  C30B25/14

CPC分类号： H01L29/78675 ,  B23K26/066 ,  B23K26/073 ,  B23K26/0734 ,  G02B5/02 ,  G02B5/3083 ,  G03F1/28 ,  G03F1/34 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/02686 ,  H01L27/1285 ,  H01L29/66757 ,  Y10T117/10

摘要： A crystallization apparatus includes an illumination system which applies illumination light for crystallization to a non-single-crystal semiconductor film, and a phase shifter which includes first and second regions disposed to form a straight boundary and transmitting the illumination light from the illumination system by a first phase retardation therebetween, and phase-modulates the illumination light to provide a light intensity distribution having an inverse peak pattern that light intensity falls in a zone of the non-single-crystal semiconductor film containing an axis corresponding to the boundary. The phase shifter further includes a small region which extends into at least one of the first and second regions from the boundary and transmits the illumination light by a second phase retardation with respect to the at least one of the first and second regions.

摘要翻译： 结晶装置包括：向非单晶半导体膜施加用于结晶的照明光的照明系统;以及移相器，其包括设置成形成直边界的第一和第二区域，并将来自照明系统的照明光透过 第一相位相位差，并且对照明光进行相位调制，以提供具有光强度落在包含对应于边界的轴的非单晶半导体膜的区域中的反峰值图案的光强度分布。 移相器还包括从边界延伸到第一和第二区域中的至少一个区域的小区域，并相对于第一和第二区域中的至少一个透射照明光第二相位延迟。