Invention Application
- Patent Title: Method of planarizing an interlayer dielectric layer
- Patent Title (中): 平面化层间电介质层的方法
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Application No.: US10777864Application Date: 2004-02-12
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Publication No.: US20050014330A1Publication Date: 2005-01-20
- Inventor: Young-Rae Park , Jae-Dong Lee , Joon Park , Chang-Ki Hong
- Applicant: Young-Rae Park , Jae-Dong Lee , Joon Park , Chang-Ki Hong
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Priority: KR2003-48432 20030715
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/3105 ; H01L21/4763 ; H01L21/768 ; H01L21/8242 ; H01L27/108
Abstract:
A method of planarizing an interlayer dielectric layer formed over a one cylinder storage (OCS) capacitor including applying two or three interlayer dielectric layers over the capacitor and planarizing the interlayer dielectric layers using CMP having a different etching selectivity according to the layers.
Information query
IPC分类:
