发明申请
- 专利标题: Plasma processing device and plasma processing method
- 专利标题(中): 等离子体处理装置和等离子体处理方法
-
申请号: US10490293申请日: 2003-02-20
-
公开(公告)号: US20050016456A1公开(公告)日: 2005-01-27
- 发明人: Noriyuki Taguchi , Yasushi Sawada , Kohichi Matsunaga
- 申请人: Noriyuki Taguchi , Yasushi Sawada , Kohichi Matsunaga
- 优先权: JP2002-43868 20020220; JP2002-305002 20021018
- 国际申请: PCT/JP03/01847 WO 20030220
- 主分类号: H05H1/24
- IPC分类号: H05H1/24 ; C23C16/00
摘要:
A plasma treatment apparatus and method are provided, which have the capability of maintaining a stable discharge, achieving a sufficient plasma treatment, and reducing plasma temperature. In this apparatus, electrodes are arranged to define a discharge space therebetween, and a dielectric material is disposed at a discharge-space side of at least one of the electrodes. A voltage is applied between the electrodes, while a plasma generation gas being supplied into the discharge space, to develop the discharge in the discharge space under a pressure substantially equal to atmospheric pressure, and provide the plasma generated by the discharge from the discharge space. A waveform of the voltage applied between the electrodes is an alternating voltage waveform without rest period. At least one of rising and falling times of the alternating voltage waveform is 100 μsec or less. A repetition frequency is in a range of 0.5 to 1000 kHz. An electric-field intensity applied between the electrodes is in a range of 0.5 to 200 kV/cm.
信息查询
IPC分类: