Plasma processing device and plasma processing method
    1.
    发明申请
    Plasma processing device and plasma processing method 审中-公开
    等离子体处理装置和等离子体处理方法

    公开(公告)号:US20050016456A1

    公开(公告)日:2005-01-27

    申请号:US10490293

    申请日:2003-02-20

    IPC分类号: H05H1/24 C23C16/00

    摘要: A plasma treatment apparatus and method are provided, which have the capability of maintaining a stable discharge, achieving a sufficient plasma treatment, and reducing plasma temperature. In this apparatus, electrodes are arranged to define a discharge space therebetween, and a dielectric material is disposed at a discharge-space side of at least one of the electrodes. A voltage is applied between the electrodes, while a plasma generation gas being supplied into the discharge space, to develop the discharge in the discharge space under a pressure substantially equal to atmospheric pressure, and provide the plasma generated by the discharge from the discharge space. A waveform of the voltage applied between the electrodes is an alternating voltage waveform without rest period. At least one of rising and falling times of the alternating voltage waveform is 100 μsec or less. A repetition frequency is in a range of 0.5 to 1000 kHz. An electric-field intensity applied between the electrodes is in a range of 0.5 to 200 kV/cm.

    摘要翻译: 提供了具有保持稳定放电,实现足够的等离子体处理和降低等离子体温度的能力的等离子体处理装置和方法。 在该装置中,电极被布置为在其间限定放电空间,并且电介质材料设置在至少一个电极的放电空间侧。 在电极之间施加电压,同时将等离子体产生气体供应到放电空间中,以在基本上等于大气压的压力下在放电空间中产生放电,并且提供通过从放电空间的放电产生的等离子体。 施加在电极之间的电压的波形是没有休止期的交流电压波形。 交流电压波形的上升和下降时间中至少有一个是100个或更少。 重复频率在0.5至1000kHz的范围内。 施加在电极之间的电场强度在0.5至200kV / cm的范围内。