发明申请
- 专利标题： Semiconductor device and a method of manufacturing the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US10921327申请日： 2004-08-19
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公开(公告)号： US20050017296A1公开(公告)日： 2005-01-27
- 发明人: Yutaka Hoshino , Shuji Ikeda , Isao Yoshida , Shiro Kamohara , Megumi Kawakami , Tomoyuki Miyake , Masatoshi Morikawa
- 申请人： Yutaka Hoshino , Shuji Ikeda , Isao Yoshida , Shiro Kamohara , Megumi Kawakami , Tomoyuki Miyake , Masatoshi Morikawa
- 专利权人： Renesas Technology Corp.
- 当前专利权人： Renesas Technology Corp.
- 优先权： JP11-266668 19990921
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/336 ; H01L21/8234 ; H01L23/482 ; H01L23/532 ; H01L27/04 ; H01L27/088 ; H01L29/417 ; H01L29/80
摘要：
In a high frequency amplifying MOSFET having a drain offset region, the size is reduced and the on-resistance is decreased by providing conductor plugs 13 (P1) for leading out electrodes on a source region 10, a drain region 9 and leach-through layers 3 (4), to which a first layer wirings 11a, 11d (M1) are connected and, further, backing second layer wirings 12a to 12d are connected on the conductor plugs 13 (P1) to the first layer wirings 11s, 11d (M1).
公开/授权文献
- US07176523B2 Power mosfet having conductor plug structured contacts 公开/授权日：2007-02-13
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