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公开(公告)号：US20110220999A1
公开(公告)日：2011-09-15
申请号：US13111001
申请日：2011-05-19
申请人： Yutaka Hoshino , Shuji Ikeda , Isao Yoshida , Shiro Kamohara , Megumi Kawakami , Tomoyuki Miyake , Masatoshi Morikawa
发明人： Yutaka Hoshino , Shuji Ikeda , Isao Yoshida , Shiro Kamohara , Megumi Kawakami , Tomoyuki Miyake , Masatoshi Morikawa
IPC分类号： H01L29/78
CPC分类号： H01L29/66659 , H01L21/823475 , H01L21/823871 , H01L23/4827 , H01L23/53219 , H01L23/53295 , H01L27/0255 , H01L27/088 , H01L29/0692 , H01L29/0696 , H01L29/0847 , H01L29/086 , H01L29/1045 , H01L29/105 , H01L29/1083 , H01L29/4175 , H01L29/41758 , H01L29/42368 , H01L29/4238 , H01L29/4916 , H01L29/7835 , H01L29/861 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： In a high frequency amplifying MOSFET having a drain offset region, the size is reduced and the on-resistance is decreased by providing conductor plugs 13 (P1) for leading out electrodes on a source region 10, a drain region 9 and leach-through layers 3 (4), to which a first layer wirings 11a, 11d (M1) are connected and, further, backing second layer wirings 12a to 12d are connected on the conductor plugs 13 (P1) to the first layer wirings 11s, 11d (M1).
摘要翻译： 在具有漏极偏移区域的高频放大MOSFET中，通过在源极区域10，漏极区域9和浸出层9上引出电极的导体插头13（P1）来减小尺寸并降低导通电阻。 连接有第一层布线11a，11d（M1）的第3层（4），另外，背面的第二层布线12a〜12d在导体插塞13（P1）上连接到第一层布线11s，11d（M1 ）。
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公开(公告)号：US20120235250A1
公开(公告)日：2012-09-20
申请号：US13486153
申请日：2012-06-01
申请人： Yutaka Hoshino , Shuji Ikeda , Isao Yoshida , Shiro Kamohara , Megumi Kawakami , Tomoyuki Miyake , Masatoshi Morikawa
发明人： Yutaka Hoshino , Shuji Ikeda , Isao Yoshida , Shiro Kamohara , Megumi Kawakami , Tomoyuki Miyake , Masatoshi Morikawa
IPC分类号： H01L29/78
CPC分类号： H01L29/66659 , H01L21/823475 , H01L21/823871 , H01L23/4827 , H01L23/53219 , H01L23/53295 , H01L27/0255 , H01L27/088 , H01L29/0692 , H01L29/0696 , H01L29/0847 , H01L29/086 , H01L29/1045 , H01L29/105 , H01L29/1083 , H01L29/4175 , H01L29/41758 , H01L29/42368 , H01L29/4238 , H01L29/4916 , H01L29/7835 , H01L29/861 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： In a high frequency amplifying MOSFET having a drain offset region, the size is reduced and the on-resistance is decreased by providing conductor plugs 13 (P1) for leading out electrodes on a source region 10, a drain region 9 and leach-through layers 3 (4), to which a first layer wirings 11a, 11d (M1) are connected and, further, backing second layer wirings 12a to 12d are connected on the conductor plugs 13 (P1) to the first layer wirings 11s, 11d (M1).
摘要翻译： 在具有漏极偏移区域的高频放大MOSFET中，通过在源极区域10，漏极区域9和浸出层9上引出电极的导体插头13（P1）来减小尺寸并降低导通电阻。 连接有第一层布线11a，11d（M1）的第3层（4），另外，背面的第二层布线12a〜12d在导体插塞13（P1）上连接到第一层布线11s，11d（M1 ）。
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3.发明授权Semiconductor device including a power MISFET and method of manufacturing the same 失效包括功率MISFET的半导体器件及其制造方法公开(公告)号：US08232595B2
公开(公告)日：2012-07-31
申请号：US13111001
申请日：2011-05-19
申请人： Yutaka Hoshino , Shuji Ikeda , Isao Yoshida , Shiro Kamohara , Megumi Kawakami , Tomoyuki Miyake , Masatoshi Morikawa
发明人： Yutaka Hoshino , Shuji Ikeda , Isao Yoshida , Shiro Kamohara , Megumi Kawakami , Tomoyuki Miyake , Masatoshi Morikawa
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119 , H01L23/48 , H01L23/52 , H01L29/40 , H01L27/10 , H01L29/74
CPC分类号： H01L29/66659 , H01L21/823475 , H01L21/823871 , H01L23/4827 , H01L23/53219 , H01L23/53295 , H01L27/0255 , H01L27/088 , H01L29/0692 , H01L29/0696 , H01L29/0847 , H01L29/086 , H01L29/1045 , H01L29/105 , H01L29/1083 , H01L29/4175 , H01L29/41758 , H01L29/42368 , H01L29/4238 , H01L29/4916 , H01L29/7835 , H01L29/861 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： In a high frequency amplifying MOSFET having a drain offset region, the size is reduced and the on-resistance is decreased by providing conductor plugs 13 (P1) for leading out electrodes on a source region 10, a drain region 9 and leach-through layers 3 (4), to which a first layer wirings 11a, 11d (M1) are connected and, further, backing second layer wirings 12a to 12d are connected on the conductor plugs 13 (P1) to the first layer wirings 11s, 11d (M1).
摘要翻译： 在具有漏极偏移区域的高频放大MOSFET中，通过在源极区域10，漏极区域9和浸出层9上引出电极的导体插头13（P1）来减小尺寸并降低导通电阻。 连接有第一层布线11a，11d（M1）的第3层（4），另外，背面的第二层布线12a〜12d在导体插塞13（P1）上连接到第一层布线11s，11d（M1 ）。
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4.发明授权Semiconductor device having a plurality of misfets formed on a main surface of a semiconductor substrate 有权半导体器件具有形成在半导体衬底的主表面上的多个缺陷公开(公告)号：US07982263B2
公开(公告)日：2011-07-19
申请号：US12609323
申请日：2009-10-30
申请人： Yutaka Hoshino , Shuji Ikeda , Isao Yoshida , Shiro Kamohara , Megumi Kawakami , Tomoyuki Miyake , Masatoshi Morikawa
发明人： Yutaka Hoshino , Shuji Ikeda , Isao Yoshida , Shiro Kamohara , Megumi Kawakami , Tomoyuki Miyake , Masatoshi Morikawa
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119 , H01L27/10 , H01L29/739 , H01L29/74
CPC分类号： H01L29/66659 , H01L21/823475 , H01L21/823871 , H01L23/4827 , H01L23/53219 , H01L23/53295 , H01L27/0255 , H01L27/088 , H01L29/0692 , H01L29/0696 , H01L29/0847 , H01L29/086 , H01L29/1045 , H01L29/105 , H01L29/1083 , H01L29/4175 , H01L29/41758 , H01L29/42368 , H01L29/4238 , H01L29/4916 , H01L29/7835 , H01L29/861 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： In a high frequency amplifying MOSFET having a drain offset region, the size is reduced and the on-resistance is decreased by providing conductor plugs 13 (P1) for leading out electrodes on a source region 10, a drain region 9 and leach-through layers 3 (4), to which a first layer wirings 11a, 11d (M1) are connected and, further, backing second layer wirings 12a to 12d are connected on the conductor plugs 13 (P1) to the first layer wirings 11s, 11d (M1).
摘要翻译： 在具有漏极偏移区域的高频放大MOSFET中，通过在源极区域10，漏极区域9和浸出层9上引出电极的导体插头13（P1）来减小尺寸并降低导通电阻。 连接有第一层布线11a，11d（M1）的第3层（4），另外，背面的第二层布线12a〜12d在导体插塞13（P1）上连接到第一层布线11s，11d（M1 ）。
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公开(公告)号：US20070114606A1
公开(公告)日：2007-05-24
申请号：US11649264
申请日：2007-01-04
申请人： Yutaka Hoshino , Shuji Ikeda , Isao Yoshida , Shiro Kamohara , Megumi Kawakami , Tomoyuki Miyake , Masatoshi Morikawa
发明人： Yutaka Hoshino , Shuji Ikeda , Isao Yoshida , Shiro Kamohara , Megumi Kawakami , Tomoyuki Miyake , Masatoshi Morikawa
IPC分类号： H01L29/76
CPC分类号： H01L29/66659 , H01L21/823475 , H01L21/823871 , H01L23/4827 , H01L23/53219 , H01L23/53295 , H01L27/0255 , H01L27/088 , H01L29/0692 , H01L29/0696 , H01L29/0847 , H01L29/086 , H01L29/1045 , H01L29/105 , H01L29/1083 , H01L29/4175 , H01L29/41758 , H01L29/42368 , H01L29/4238 , H01L29/4916 , H01L29/7835 , H01L29/861 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： In a high frequency amplifying MOSFET having a drain offset region, the size is reduced and the on-resistance is decreased by providing conductor plugs 13 (P1) for leading out electrodes on a source region 10, a drain region 9 and leach-through layers 3 (4), to which a first layer wirings 11a, 11d (M1) are connected and, further, backing second layer wirings 12a to 12d are connected on the conductor plugs 13 (P1) to the first layer wirings 11s, 11d (M1).
摘要翻译： 在具有漏极偏移区域的高频放大MOSFET中，通过提供用于在源极区域10，漏极区域9和漏电极上引出电极的导体插头13（P 1），尺寸减小并且导通电阻降低 连接有第一层布线11a，11d（M1）的层3（4），并且另外，背面的第二层布线12a至12d在导体塞13（P1）上连接到第一层 层布线11s，11d（M 1）。
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公开(公告)号：US06797594B2
公开(公告)日：2004-09-28
申请号：US09782303
申请日：2001-02-14
申请人： Yutaka Hoshino , Shuji Ikeda , Isao Yoshida , Shiro Kamohara , Megumi Kawakami , Tomoyuki Miyake , Masatoshi Morikawa
发明人： Yutaka Hoshino , Shuji Ikeda , Isao Yoshida , Shiro Kamohara , Megumi Kawakami , Tomoyuki Miyake , Masatoshi Morikawa
IPC分类号： H01L21265
CPC分类号： H01L29/66659 , H01L21/823475 , H01L21/823871 , H01L23/4827 , H01L23/53219 , H01L23/53295 , H01L27/0255 , H01L27/088 , H01L29/0692 , H01L29/0696 , H01L29/0847 , H01L29/086 , H01L29/1045 , H01L29/105 , H01L29/1083 , H01L29/4175 , H01L29/41758 , H01L29/42368 , H01L29/4238 , H01L29/4916 , H01L29/7835 , H01L29/861 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： In a high frequency amplifying MOSFET having a drain offset region, the size is reduced and the on-resistance is decreased by providing conductor plugs 13 (P1) for leading out electrodes on a source region 10, a drain region 9 and leach-through layers 3 (4), to which a first layer wirings 11a, 11d (M1) are connected and, further, backing second layer wirings 12a to 12d are connected on the conductor plugs 13 (P1) to the first layer wirings 11s, 11d (M1).
摘要翻译： 在具有漏极偏移区域的高频放大MOSFET中，通过在源极区域10，漏极区域9和浸出层9上引出电极的导体插头13（P1）来减小尺寸并降低导通电阻。 连接有第一层布线11a，11d（M1）的第3层（4），另外，背面的第二层布线12a〜12d在导体插塞13（P1）上连接到第一层布线11s，11d（M1 ）。
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公开(公告)号：US06605842B2
公开(公告)日：2003-08-12
申请号：US10187288
申请日：2002-07-02
申请人： Yutaka Hoshino , Shuji Ikeda , Isao Yoshida , Shiro Kamohara , Megumi Kawakami , Tomoyuki Miyake , Masatoshi Morikawa
发明人： Yutaka Hoshino , Shuji Ikeda , Isao Yoshida , Shiro Kamohara , Megumi Kawakami , Tomoyuki Miyake , Masatoshi Morikawa
IPC分类号： H01L31119
CPC分类号： H01L29/66659 , H01L21/823475 , H01L21/823871 , H01L23/4827 , H01L23/53219 , H01L23/53295 , H01L27/0255 , H01L27/088 , H01L29/0692 , H01L29/0696 , H01L29/0847 , H01L29/086 , H01L29/1045 , H01L29/105 , H01L29/1083 , H01L29/4175 , H01L29/41758 , H01L29/42368 , H01L29/4238 , H01L29/4916 , H01L29/7835 , H01L29/861 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： In a high frequency amplifying MOSFET having a drain offset region, the size is reduced and the on-resistance is decreased by providing conductor plugs 13 (P1) for leading out electrodes on a source region 10, a drain region 9 and leach-through layers 3 (4), to which a first layer wirings 11a, 11d (M1) are connected and, further, backing second layer wirings 12a to 12d are connected on the conductor plugs 13 (P1) to the first layer wirings 11s, 11d (M1).
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8.发明申请SEMICONDUCTOR DEVICE HAVING A PLURALITY OF MISFETS FORMED ON A MAIN SURFACE OF A SEMICONDUCTOR SUBSTRATE 有权在半导体基板的主表面上形成多个MISFET的半导体器件公开(公告)号：US20100044793A1
公开(公告)日：2010-02-25
申请号：US12609323
申请日：2009-10-30
申请人： Yutaka Hoshino , Shuji Ikeda , Isao Yoshida , Shiro Kamohara , Megumi Kawakami , Tomoyuki Miyake , Masatoshi Morikawa
发明人： Yutaka Hoshino , Shuji Ikeda , Isao Yoshida , Shiro Kamohara , Megumi Kawakami , Tomoyuki Miyake , Masatoshi Morikawa
IPC分类号： H01L29/78
CPC分类号： H01L29/66659 , H01L21/823475 , H01L21/823871 , H01L23/4827 , H01L23/53219 , H01L23/53295 , H01L27/0255 , H01L27/088 , H01L29/0692 , H01L29/0696 , H01L29/0847 , H01L29/086 , H01L29/1045 , H01L29/105 , H01L29/1083 , H01L29/4175 , H01L29/41758 , H01L29/42368 , H01L29/4238 , H01L29/4916 , H01L29/7835 , H01L29/861 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： In a high frequency amplifying MOSFET having a drain offset region, the size is reduced and the on-resistance is decreased by providing conductor plugs 13 (P1) for leading out electrodes on a source region 10, a drain region 9 and leach-through layers 3 (4), to which a first layer wirings 11a, 11d(M1) are connected and, further, backing second layer wirings 12a to 12d are connected on the conductor plugs 13 (P1) to the first layer wirings 11s, 11d (M1).
摘要翻译： 在具有漏极偏移区域的高频放大MOSFET中，通过在源极区域10，漏极区域9和浸出层9上引出电极的导体插头13（P1）来减小尺寸并降低导通电阻。 连接有第一层布线11a，11d（M1）的第3层（4），另外，背面的第二层布线12a〜12d在导体插塞13（P1）上连接到第一层布线11s，11d（M1 ）。
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公开(公告)号：US20050017296A1
公开(公告)日：2005-01-27
申请号：US10921327
申请日：2004-08-19
申请人： Yutaka Hoshino , Shuji Ikeda , Isao Yoshida , Shiro Kamohara , Megumi Kawakami , Tomoyuki Miyake , Masatoshi Morikawa
发明人： Yutaka Hoshino , Shuji Ikeda , Isao Yoshida , Shiro Kamohara , Megumi Kawakami , Tomoyuki Miyake , Masatoshi Morikawa
IPC分类号： H01L29/78 , H01L21/336 , H01L21/8234 , H01L23/482 , H01L23/532 , H01L27/04 , H01L27/088 , H01L29/417 , H01L29/80
CPC分类号： H01L29/66659 , H01L21/823475 , H01L21/823871 , H01L23/4827 , H01L23/53219 , H01L23/53295 , H01L27/0255 , H01L27/088 , H01L29/0692 , H01L29/0696 , H01L29/0847 , H01L29/086 , H01L29/1045 , H01L29/105 , H01L29/1083 , H01L29/4175 , H01L29/41758 , H01L29/42368 , H01L29/4238 , H01L29/4916 , H01L29/7835 , H01L29/861 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： In a high frequency amplifying MOSFET having a drain offset region, the size is reduced and the on-resistance is decreased by providing conductor plugs 13 (P1) for leading out electrodes on a source region 10, a drain region 9 and leach-through layers 3 (4), to which a first layer wirings 11a, 11d (M1) are connected and, further, backing second layer wirings 12a to 12d are connected on the conductor plugs 13 (P1) to the first layer wirings 11s, 11d (M1).
摘要翻译： 在具有漏极偏移区域的高频放大MOSFET中，通过在源极区域10，漏极区域9和浸出层9上引出电极的导体插头13（P1）来减小尺寸并降低导通电阻。 连接有第一层布线11a，11d（M1）的第3层（4），另外，背面的第二层布线12a〜12d在导体插塞13（P1）上连接到第一层布线11s，11d（M1 ）。
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公开(公告)号：US08482058B2
公开(公告)日：2013-07-09
申请号：US13486153
申请日：2012-06-01
申请人： Yutaka Hoshino , Shuji Ikeda , Isao Yoshida , Shiro Kamohara , Megumi Kawakami , Tomoyuki Miyake , Masatoshi Morikawa
发明人： Yutaka Hoshino , Shuji Ikeda , Isao Yoshida , Shiro Kamohara , Megumi Kawakami , Tomoyuki Miyake , Masatoshi Morikawa
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119 , H01L27/10 , H01L29/74
CPC分类号： H01L29/66659 , H01L21/823475 , H01L21/823871 , H01L23/4827 , H01L23/53219 , H01L23/53295 , H01L27/0255 , H01L27/088 , H01L29/0692 , H01L29/0696 , H01L29/0847 , H01L29/086 , H01L29/1045 , H01L29/105 , H01L29/1083 , H01L29/4175 , H01L29/41758 , H01L29/42368 , H01L29/4238 , H01L29/4916 , H01L29/7835 , H01L29/861 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： In a high frequency amplifying MOSFET having a drain offset region, the size is reduced and the on-resistance is decreased by providing conductor plugs 13 (P1) for leading out electrodes on a source region 10, a drain region 9 and leach-through layers 3 (4), to which a first layer wirings 11a, 11d (M1) are connected and, further, backing second layer wirings 12a to 12d are connected on the conductor plugs 13 (P1) to the first layer wirings 11s, 11d (M1).
摘要翻译： 在具有漏极偏移区域的高频放大MOSFET中，通过在源极区域10，漏极区域9和浸出层9上引出电极的导体插头13（P1）来减小尺寸并降低导通电阻。 连接有第一层布线11a，11d（M1）的第3层（4），另外，背面的第二层布线12a〜12d在导体插塞13（P1）上连接到第一层布线11s，11d（M1 ）。
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