发明申请
- 专利标题: Buffer layer for thin film structures
- 专利标题(中): 薄膜结构缓冲层
-
申请号: US10624855申请日: 2003-07-21
-
公开(公告)号: US20050019616A1公开(公告)日: 2005-01-27
- 发明人: Stephen Foltyn , Quanxi Jia , Paul Arendt , Haiyan Wang
- 申请人: Stephen Foltyn , Quanxi Jia , Paul Arendt , Haiyan Wang
- 主分类号: H01L39/24
- IPC分类号: H01L39/24 ; B32B9/00
摘要:
A composite structure including a base substrate and a layer of a mixture of strontium titanate and strontium ruthenate is provided. A superconducting article can include a composite structure including an outermost layer of magnesium oxide, a buffer layer of strontium titanate or a mixture of strontium titanate and strontium ruthenate and a top-layer of a superconducting material such as YBCO upon the buffer layer.
公开/授权文献
- US07129196B2 Buffer layer for thin film structures 公开/授权日:2006-10-31
信息查询
IPC分类: