发明申请
- 专利标题： Etching method used in fabrications of microstructures
- 专利标题（中）： 用于微结构制造中的蚀刻方法
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申请号： US10666002申请日： 2003-09-17
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公开(公告)号： US20050020089A1公开(公告)日： 2005-01-27
- 发明人: Hongqin Shi , Gregory Schaadt , Andrew Huibers , Satyadev Patel
- 申请人： Hongqin Shi , Gregory Schaadt , Andrew Huibers , Satyadev Patel
- 主分类号： G02B26/08
- IPC分类号： G02B26/08 ; H01L21/00 ; H01L21/302 ; H01L21/461
摘要：
The present invention discloses a method and apparatus for removing the sacrificial materials in fabrications of microstructures using a vapor phase etchant recipe having a spontaneous vapor phase chemical etchant. The vapor phase etchant recipe has a mean-free-path corresponding to the minimum thickness of the sacrificial layers between the structural layers of the microstructure. This method is of particular importance in removing the sacrificial layers underneath the structural layers of the microstructure.
公开/授权文献
- US07027200B2 Etching method used in fabrications of microstructures 公开/授权日：2006-04-11