公开(公告)号：US20050045276A1

公开(公告)日：2005-03-03

申请号：US10922565

申请日：2004-08-19

申请人： Satyadev Patel ,  Andrew Huibers ,  Gregory Schaadt ,  Peter Heureux

发明人： Satyadev Patel ,  Andrew Huibers ,  Gregory Schaadt ,  Peter Heureux

IPC分类号： B81B3/00 ,  C23F1/00 ,  H01L21/00 ,  H01L21/302 ,  H01L21/306 ,  H01L21/461

CPC分类号： B81C1/00476 ,  B81C1/00547 ,  B81C2201/0109 ,  B81C2201/0132 ,  B81C2201/0133 ,  B81C2201/112 ,  B82Y30/00

摘要： An etching method, such as for forming a micromechanical device, is disclosed. One embodiment of the method is for releasing a micromechanical structure, comprising, providing a substrate; providing a sacrificial layer directly or indirectly on the substrate; providing one or more micromechanical structural layers on the sacrificial layer; performing a first etch to remove a portion of the sacrificial layer, the first etch comprising providing an etchant gas and energizing the etchant gas so as to allow the etchant gas to physically, or chemically and physically, remove the portion of the sacrificial layer; performing a second etch to remove additional sacrificial material in the sacrificial layer, the second etch comprising providing a gas that chemically but not physically etches the additional sacrificial material. Another embodiment of the method is for etching a silicon material on or within a substrate, comprising: performing a first etch to remove a portion of the silicon, the first etch comprising providing an etchant gas and energizing the etchant gas so as to allow the etchant gas to physically, or chemically and physically, remove the portion of silicon; performing a second etch to remove additional silicon, the second etch comprising providing an etchant gas that chemically but not physically etches the additional silicon.

摘要翻译： 公开了一种诸如用于形成微机械装置的蚀刻方法。 该方法的一个实施例是用于释放微机械结构，包括：提供衬底; 在衬底上直接或间接提供牺牲层; 在所述牺牲层上提供一个或多个微机械结构层; 执行第一蚀刻以去除牺牲层的一部分，所述第一蚀刻包括提供蚀刻剂气体并激发蚀刻剂气体，以允许蚀刻剂气体在物理或化学和物理上移除牺牲层的该部分; 执行第二蚀刻以去除牺牲层中的附加牺牲材料，第二蚀刻包括提供化学上但不物理蚀刻附加牺牲材料的气体。 该方法的另一实施例是用于在衬底上或衬底内蚀刻硅材料，包括：执行第一蚀刻以去除硅的一部分，第一蚀刻包括提供蚀刻剂气体并激发蚀刻剂气体以允许蚀刻剂 物理或化学和物理的气体去除硅的部分; 执行第二蚀刻以去除附加的硅，第二蚀刻包括提供蚀刻剂气体，其化学地但不物理地蚀刻附加的硅。

公开(公告)号：US08395837B2

公开(公告)日：2013-03-12

申请号：US11734458

申请日：2007-04-12

申请人： Hongqin Shi ,  Gregory Schaadt ,  James C. Dunphy ,  Dmitri Simonian ,  John D. Porter

发明人： Hongqin Shi ,  Gregory Schaadt ,  James C. Dunphy ,  Dmitri Simonian ,  John D. Porter

IPC分类号： G02B26/00

CPC分类号： B81B3/0005 ,  B81B2201/042 ,  B81C2201/112 ,  G02B26/0833 ,  H01L21/02046 ,  H01L21/02164 ,  H01L21/3121

摘要： A releasing and post-releasing method for making a micromirror device and a micromirror array device are disclosed herein. The releasing method removes the sacrificial materials in the micromirror and micromirror array so as to enabling movements of the movable elements in the micromirror and micromirror array device. The post-releasing method is applied to improve the performance and quality of the released micromirrors and micromirror array devices.

摘要翻译： 本文公开了用于制造微镜器件和微镜阵列器件的释放和释放方法。 释放方法去除了微反射镜和微镜阵列中的牺牲材料，以便使得微镜和微镜阵列器件中的可移动元件能够移动。 应用后释放方法来提高释放的微镜和微镜阵列器件的性能和质量。

公开(公告)号：US20070119814A1

公开(公告)日：2007-05-31

申请号：US11627026

申请日：2007-01-25

申请人： Satyadev Patel ,  Gregory Schaadt ,  Douglas MacDonald ,  Niles MacDonald ,  Hongqin Shi

发明人： Satyadev Patel ,  Gregory Schaadt ,  Douglas MacDonald ,  Niles MacDonald ,  Hongqin Shi

IPC分类号： C03C25/68 ,  G01L21/30 ,  H01L21/306 ,  H01L21/461 ,  B44C1/22

CPC分类号： H01J37/32963 ,  B81C1/00476 ,  B81C1/00587 ,  B81C99/0065 ,  B81C2201/0132 ,  B81C2201/0138 ,  H01J37/32449 ,  H01J37/32935

摘要： Processes for the removal of a layer or region from a workpiece material by contact with a process gas in the manufacture of a microstructure are enhanced by the ability to accurately determine the endpoint of the removal step. A vapor phase etchant is used to remove a material that has been deposited on a substrate, with or without other deposited structure thereon. By creating an impedance at the exit of an etching chamber (or downstream thereof), as the vapor phase etchant passes from the etching chamber, a gaseous product of the etching reaction is monitored; and the endpoint of the removal process can be determined. The vapor phase etching process can be flow through, a combination of flow through and pulse, or recirculated back to the etching chamber

摘要翻译： 通过与制造微结构中的工艺气体接触从工件材料去除层或区域的工艺通过精确地确定去除步骤的终点的能力增强。 气相蚀刻剂用于去除已经沉积在基底上的材料，其上具有或不具有其它沉积结构。 通过在蚀刻室（或其下游）的出口处产生阻抗，当气相蚀刻剂从蚀刻室通过时，监测蚀刻反应的气态产物; 并且可以确定去除过程的终点。 气相蚀刻工艺可以流过，流过和脉冲的组合，或再循环回蚀刻室

公开(公告)号：US20050059254A1

公开(公告)日：2005-03-17

申请号：US10666671

申请日：2003-09-17

申请人： Hongqin Shi ,  Gregory Schaadt

发明人： Hongqin Shi ,  Gregory Schaadt

IPC分类号： B81C1/00 ,  C23F1/12 ,  H01L20060101 ,  H01L21/00 ,  H01L21/302 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/461

CPC分类号： H01L21/31116 ,  B81C1/00531 ,  B81C2201/0109 ,  C23F1/12 ,  H01L21/32135 ,  H01L21/67069 ,  H01L21/67253

摘要： The present invention provides a method for removing sacrificial materials in fabrications of microstructures using a selected spontaneous vapor phase chemical etchants. During the etching process, an amount of the etchant is fed into an etch chamber for removing the sacrificial material. Additional amount of the etchant are fed into the etch chamber according to a detection of an amount or an amount of an etching product so as to maintaining a substantially constant etching rate of the sacrificial materials inside the etch chamber. Accordingly, an etching system is provided for removing the sacrificial materials based on the disclosed etching method.

摘要翻译： 本发明提供一种使用选定的自发气相化学蚀刻剂去除微结构制造中的牺牲材料的方法。 在蚀刻过程中，将一定量的蚀刻剂送入用于去除牺牲材料的蚀刻室中。 根据蚀刻产物的量或量的检测，将蚀刻剂的额外量进料到蚀刻室中，以保持蚀刻室内的牺牲材料的蚀刻速率基本上恒定。 因此，提供了基于所公开的蚀刻方法去除牺牲材料的蚀刻系统。

公开(公告)号：US20050059253A1

公开(公告)日：2005-03-17

申请号：US10665998

申请日：2003-09-17

申请人： Gregory Schaadt ,  Hongqin Shi

发明人： Gregory Schaadt ,  Hongqin Shi

IPC分类号： B01D20060101 ,  C23F1/00 ,  G01R31/00 ,  H01L21/00 ,  H01L21/302 ,  H01L21/461

CPC分类号： B81C1/00595 ,  B81C2201/0132

摘要： The present invention teaches a method and apparatus for removing sacrificial materials in fabrications of microstructures using one or more selected spontaneous vapor phase etchants. The selected etchant is fed into an etch chamber containing the microstructure during each feeding cycle of a sequence of feeding cycles until the sacrificial material of the microstructure is exhausted through the chemical reaction between the etchant and the sacrificial material. Specifically, during a first feeding cycle, a first amount of selected spontaneous vapor phase etchant is fed into the etch chamber. At a second feeding cycle, a second amount of the etchant is fed into the etch chamber. The first amount and the second amount of the selected etchant may or may not be the same. The time duration of the feeding cycles are individually adjustable.

公开(公告)号：US20050020089A1

公开(公告)日：2005-01-27

申请号：US10666002

申请日：2003-09-17

申请人： Hongqin Shi ,  Gregory Schaadt ,  Andrew Huibers ,  Satyadev Patel

发明人： Hongqin Shi ,  Gregory Schaadt ,  Andrew Huibers ,  Satyadev Patel

IPC分类号： G02B26/08 ,  H01L21/00 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01L21/67069 ,  B81C1/00595 ,  B81C2201/0132 ,  G02B26/0841

摘要： The present invention discloses a method and apparatus for removing the sacrificial materials in fabrications of microstructures using a vapor phase etchant recipe having a spontaneous vapor phase chemical etchant. The vapor phase etchant recipe has a mean-free-path corresponding to the minimum thickness of the sacrificial layers between the structural layers of the microstructure. This method is of particular importance in removing the sacrificial layers underneath the structural layers of the microstructure.

摘要翻译： 本发明公开了一种使用具有自发气相化学蚀刻剂的气相蚀刻剂配方去除微结构制造中的牺牲材料的方法和装置。 气相蚀刻剂配方具有对应于微结构的结构层之间的牺牲层的最小厚度的平均自由程。 该方法在去除微结构结构层下面的牺牲层时尤其重要。

公开(公告)号：US20120184067A1

公开(公告)日：2012-07-19

申请号：US11734458

申请日：2007-04-12

申请人： Hongqin Shi ,  Gregory Schaadt ,  James C. Dunphy ,  Dmitri Simonian ,  John D. Porter

发明人： Hongqin Shi ,  Gregory Schaadt ,  James C. Dunphy ,  Dmitri Simonian ,  John D. Porter

IPC分类号： H01L21/50

CPC分类号： B81B3/0005 ,  B81B2201/042 ,  B81C2201/112 ,  G02B26/0833 ,  H01L21/02046 ,  H01L21/02164 ,  H01L21/3121

摘要： A releasing and post-releasing method for making a micromirror device and a micromirror array device are disclosed herein. The releasing method removes the sacrificial materials in the micromirror and micromirror array so as to enabling movements of the movable elements in the micromirror and micromirror array device. The post-releasing method is applied to improve the performance and quality of the released micromirrors and micromirror array devices.

摘要翻译： 本文公开了用于制造微镜器件和微镜阵列器件的释放和释放方法。 释放方法去除了微反射镜和微镜阵列中的牺牲材料，以便使得微镜和微镜阵列器件中的可移动元件能够移动。 应用后释放方法来提高释放的微镜和微镜阵列器件的性能和质量。

公开(公告)号：US20070172991A1

公开(公告)日：2007-07-26

申请号：US11622179

申请日：2007-01-11

申请人： Gregory Schaadt

发明人： Gregory Schaadt

IPC分类号： H01L21/00

CPC分类号： B81C1/00269 ,  B81C2203/0109 ,  B81C2203/0181 ,  B81C2203/036 ,  H01L23/10 ,  H01L23/345 ,  H01L2924/0002 ,  H01L2924/01079 ,  H01L2924/00

摘要： A method of packing electronic devices and an apparatus thereof are disclosed herein. The method allows for usage of solder materials with a melting temperature of 180° C. or higher, such as from 210° C. to 300° C., and from 230° C. to 260° C., so as to provide reliable and robust packaging. This method is particularly useful for packaging electronic devices that are sensitive to temperatures, such as microstructures, which can be microelectromechanical devices (MEMS), such as micromirror array devices.

摘要翻译： 本文公开了一种包装电子设备的方法及其装置。 该方法允许使用熔融温度为180℃或更高，例如210℃至300℃，以及230℃至260℃的焊料材料，以提供可靠的 和坚固的包装。 该方法特别适用于封装对温度敏感的电子器件，例如微结构，其可以是诸如微镜阵列器件的微机电器件（MEMS）。