发明申请
- 专利标题： Semiconductor device and method for fabricating the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US10830134申请日： 2004-04-23
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公开(公告)号： US20050023702A1公开(公告)日： 2005-02-03
- 发明人: Atsushi Nishimura , Toru Hinomura , Atsushi Ikeda , Takenobu Kishida
- 申请人： Atsushi Nishimura , Toru Hinomura , Atsushi Ikeda , Takenobu Kishida
- 专利权人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- 当前专利权人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- 优先权： JP2003-283415 20030731
- 主分类号： H01L21/285
- IPC分类号： H01L21/285 ; H01L21/44 ; H01L21/768 ; H01L23/52
摘要：
After forming a hole in an insulating film, a first tungsten film is formed over the wall and bottom surfaces of the hole. Then, a second tungsten film is formed by using the first tungsten film as a seed layer to fill up the hole. When the first tungsten film is formed, the average value of the diameters of crystal grains of the portion of the first tungsten film which is formed on the bottom surface of the hole is suppressed to 30 nm or less.
公开/授权文献
- US07233073B2 Semiconductor device and method for fabricating the same 公开/授权日：2007-06-19