公开(公告)号：US20050023702A1

公开(公告)日：2005-02-03

申请号：US10830134

申请日：2004-04-23

申请人： Atsushi Nishimura ,  Toru Hinomura ,  Atsushi Ikeda ,  Takenobu Kishida

发明人： Atsushi Nishimura ,  Toru Hinomura ,  Atsushi Ikeda ,  Takenobu Kishida

IPC分类号： H01L21/285 ,  H01L21/44 ,  H01L21/768 ,  H01L23/52

CPC分类号： H01L21/76862 ,  H01L21/28556 ,  H01L21/76864 ,  H01L21/76876 ,  H01L21/76877

摘要： After forming a hole in an insulating film, a first tungsten film is formed over the wall and bottom surfaces of the hole. Then, a second tungsten film is formed by using the first tungsten film as a seed layer to fill up the hole. When the first tungsten film is formed, the average value of the diameters of crystal grains of the portion of the first tungsten film which is formed on the bottom surface of the hole is suppressed to 30 nm or less.

摘要翻译： 在绝缘膜中形成孔之后，在孔的壁和底表面上形成第一钨膜。 然后，通过使用第一钨膜作为籽晶层填充孔而形成第二钨膜。 当形成第一钨膜时，形成在孔的底面上的第一钨膜的部分的晶粒直径的平均值被抑制在30nm以下。

公开(公告)号：US07233073B2

公开(公告)日：2007-06-19

申请号：US10830134

申请日：2004-04-23

申请人： Atsushi Nishimura ,  Toru Hinomura ,  Atsushi Ikeda ,  Takenobu Kishida

发明人： Atsushi Nishimura ,  Toru Hinomura ,  Atsushi Ikeda ,  Takenobu Kishida

IPC分类号： H01L23/48

CPC分类号： H01L21/76862 ,  H01L21/28556 ,  H01L21/76864 ,  H01L21/76876 ,  H01L21/76877

摘要： After forming a hole in an insulating film, a first tungsten film is formed over the wall and bottom surfaces of the hole. Then, a second tungsten film is formed by using the first tungsten film as a seed layer to fill up the hole. When the first tungsten film is formed, the average value of the diameters of crystal grains of the portion of the first tungsten film which is formed on the bottom surface of the hole is suppressed to 30 nm or less.

摘要翻译： 在绝缘膜中形成孔之后，在孔的壁和底表面上形成第一钨膜。 然后，通过使用第一钨膜作为籽晶层填充孔而形成第二钨膜。 当形成第一钨膜时，形成在孔的底面上的第一钨膜的部分的晶粒直径的平均值被抑制在30nm以下。

公开(公告)号：US06963139B2

公开(公告)日：2005-11-08

申请号：US10882256

申请日：2004-07-02

申请人： Takenobu Kishida ,  Shinya Tada ,  Atsushi Ikeda ,  Takeshi Harada ,  Kohei Sugihara

发明人： Takenobu Kishida ,  Shinya Tada ,  Atsushi Ikeda ,  Takeshi Harada ,  Kohei Sugihara

IPC分类号： H01L21/3205 ,  H01L21/768 ,  H01L23/532 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L21/76843 ,  H01L21/76864 ,  H01L21/76873 ,  H01L23/53238 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

摘要： A barrier layer is formed on an insulating or conducting film provided on a semiconductor substrate, and an electrode or an interconnect made from a conducting film is formed on the barrier layer. The barrier layer includes a tantalum film having the β-crystal structure.

公开(公告)号：US07001841B2

公开(公告)日：2006-02-21

申请号：US10643980

申请日：2003-08-20

申请人： Shuji Hirao ,  Takeshi Harada ,  Kazushi Nii ,  Takenobu Kishida ,  Atsushi Ikeda ,  Kazunori Tsuji

发明人： Shuji Hirao ,  Takeshi Harada ,  Kazushi Nii ,  Takenobu Kishida ,  Atsushi Ikeda ,  Kazunori Tsuji

IPC分类号： H01L21/44

CPC分类号： H01L21/76843 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76874 ,  H01L21/76877

摘要： After a thin first conductive film is formed on a barrier film having a crystal structure, a second conductive film is formed on the first conductive film. Thereafter, the first conductive film and the second conductive film are heated such that the first and second conductive films are integrated to form a third conductive film.

摘要翻译： 在具有晶体结构的阻挡膜上形成薄的第一导电膜之后，在第一导电膜上形成第二导电膜。 此后，第一导电膜和第二导电膜被加热，使得第一和第二导电膜被一体化以形成第三导电膜。

公开(公告)号：US06951809B2

公开(公告)日：2005-10-04

申请号：US10613048

申请日：2003-07-07

申请人： Nobuaki Tarumi ,  Atsushi Ikeda ,  Takenobu Kishida

发明人： Nobuaki Tarumi ,  Atsushi Ikeda ,  Takenobu Kishida

IPC分类号： H01L21/3065 ,  H01L21/768 ,  H01L21/4763

CPC分类号： H01L21/76843 ,  H01L21/76804 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/76862 ,  H01L21/76865 ,  H01L21/76873

摘要： A lower barrier layer made of tantalum nitride having a thickness of approximately 25 nm is deposited by sputtering on a fourth insulating film inclusive of the sidewall surfaces and the bottom surfaces of a via hole and an upper-interconnect-forming groove. The sputtering is performed under the conditions where approximately 10 kW of DC source power is applied to a target. Thereafter, the DC source power is reduced to approximately 2 kW, and approximately 200 W of RF power is applied to a semiconductor substrate. Here, the lower barrier layer is subjected to a sputter-etching process employing argon gas at an etching amount of approximately 5 nm, so that a part of the lower barrier layer deposited on the bottom surface of the via hole is at least partially deposited on the lower part of the sidewall surface of the via hole.

摘要翻译： 通过溅射将由厚度约25nm的氮化钽制成的下阻挡层沉积在包括通孔和上互连形成槽的侧壁表面和底表面的第四绝缘膜上。 在将约10kW的直流电源施加到目标的条件下进行溅射。 此后，DC源功率降低到约2kW，并且将大约200W的RF功率施加到半导体衬底。 这里，下蚀刻层用蚀刻量为约5nm的氩气进行溅射蚀刻，使得沉积在通孔底面上的下阻挡层的一部分至少部分沉积在 通孔的侧壁表面的下部。

公开(公告)号：US20050035454A1

公开(公告)日：2005-02-17

申请号：US10882256

申请日：2004-07-02

申请人： Takenobu Kishida ,  Shinya Tada ,  Atsushi Ikeda ,  Takeshi Harada ,  Kohei Sugihara

发明人： Takenobu Kishida ,  Shinya Tada ,  Atsushi Ikeda ,  Takeshi Harada ,  Kohei Sugihara

IPC分类号： H01L21/3205 ,  H01L21/768 ,  H01L23/532 ,  H01L29/04

CPC分类号： H01L21/76843 ,  H01L21/76864 ,  H01L21/76873 ,  H01L23/53238 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

摘要： A barrier layer is formed on an insulating or conducting film provided on a semiconductor substrate, and an electrode or an interconnect made from a conducting film is formed on the barrier layer. The barrier layer includes a tantalum film having the β-crystal structure.

摘要翻译： 在设置在半导体衬底上的绝缘或导电膜上形成阻挡层，并且在阻挡层上形成由导电膜制成的电极或互连。 阻挡层包括具有β-晶体结构的钽膜。

公开(公告)号：US06770977B2

公开(公告)日：2004-08-03

申请号：US10036388

申请日：2002-01-07

申请人： Takenobu Kishida ,  Shinya Tada ,  Atsushi Ikeda ,  Takeshi Harada ,  Kohei Sugihara

发明人： Takenobu Kishida ,  Shinya Tada ,  Atsushi Ikeda ,  Takeshi Harada ,  Kohei Sugihara

IPC分类号： H01L2348

CPC分类号： H01L21/76843 ,  H01L21/76864 ,  H01L21/76873 ,  H01L23/53238 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

摘要： A barrier layer is formed on an insulating or conducting film provided on a semiconductor substrate, and an electrode or an interconnect made from a conducting film is formed on the barrier layer. The barrier layer includes a tantalum film having the &bgr;-crystal structure.

摘要翻译： 在设置在半导体衬底上的绝缘或导电膜上形成阻挡层，并且在阻挡层上形成由导电膜制成的电极或互连。 阻挡层包括具有β-晶体结构的钽膜。

公开(公告)号：US09183404B2

公开(公告)日：2015-11-10

申请号：US13090986

申请日：2011-04-20

申请人： Atsushi Ikeda ,  Hiroyuki Amano

发明人： Atsushi Ikeda ,  Hiroyuki Amano

IPC分类号： G06F7/04 ,  G06F21/60 ,  H04L29/06

CPC分类号： G06F3/1204 ,  G06F3/1222 ,  G06F3/1238 ,  G06F3/1239 ,  G06F21/608 ,  H04L63/0815

摘要： An image sending apparatus includes a first authentication unit configured to perform processing for first authentication to authenticate a user, a storage unit configured to store authentication information used when the first authentication unit authenticates the user, a sending unit capable of sending image data by a plurality of kinds of sending methods, a destination setting unit configured to set a destination to which the sending unit sends the image data, a second authentication unit configured to perform processing for second authentication required for the sending unit to send the image data to the destination set by the destination setting unit, and a determination unit configured to determine whether to use the authentication information stored in the storage unit when the second authentication unit performs the processing for the second authentication, based on the sending method by which the sending unit sends the image data to the destination.

摘要翻译： 一种图像发送装置包括：第一认证单元，被配置为执行用于对用户进行认证的第一认证的处理;存储单元，被配置为存储当第一认证单元认证用户时使用的认证信息;能够通过多个发送图像数据的发送单元 发送方式的种类的目的地设定单元，被配置为设定发送单元发送图像数据的目的地;第二认证单元，被配置为执行发送单元发送图像数据到目的地集合所需的第二认证的处理 以及确定单元，被配置为基于发送单元发送图像的发送方法，当第二认证单元执行用于第二认证的处理时，确定是否使用存储在存储单元中的认证信息 数据到目的地。

公开(公告)号：US08263117B2

公开(公告)日：2012-09-11

申请号：US12525977

申请日：2008-02-06

申请人： Atsushi Ikeda ,  Jun-ichi Kikuchi

发明人： Atsushi Ikeda ,  Jun-ichi Kikuchi

IPC分类号： A61K9/127

CPC分类号： A61K31/724 ,  A61K8/14 ,  A61K8/31 ,  A61K8/738 ,  A61K9/127 ,  A61K9/1272 ,  A61K9/1277 ,  A61K41/0057 ,  A61K47/40 ,  A61K47/6951 ,  A61K2800/522 ,  A61K2800/81 ,  A61Q19/00 ,  B82Y5/00 ,  A61K2300/00

摘要： A solution containing a C70 cyclodextrin complex and a solution containing a lipid that is capable of forming a liposome are mixed together at a temperature in a range of 10° C. to 45° C. This produces a C70-incorporated liposome which keeps a physical property that the C70 fullerene originally has, and is stably solubilized in a polar solvent. Hence, the present invention provides a C70-incorporated liposome which keeps a physical property that the C70 fullerene originally has, and which is stably solubilized in a polar solvent, a production method of the same, and a use of the same.

摘要翻译： 含有C70环糊精复合物和含有能够形成脂质体的脂质的溶液的溶液在10℃至45℃的温度下混合在一起。这产生了引入C70的脂质体，其保持物理 C70富勒烯最初具有的性质，并且稳定地溶解在极性溶剂中。 因此，本发明提供了一种保持C70富勒烯原有的物理性质并且稳定溶解在极性溶剂中的C70引入的脂质体及其制备方法及其用途。

公开(公告)号：US08206615B2

公开(公告)日：2012-06-26

申请号：US12449777

申请日：2008-02-20

申请人： Kazuki Shigeta ,  Takejiro Inoue ,  Atsushi Ikeda ,  Kazuki Goto

发明人： Kazuki Shigeta ,  Takejiro Inoue ,  Atsushi Ikeda ,  Kazuki Goto

IPC分类号： H01B1/22

CPC分类号： H01J1/304 ,  B82Y10/00 ,  H01J9/025 ,  H01J31/127 ,  H01J63/02 ,  H01J2201/30469

摘要： An object of the present invention is to provide a paste for an electron emission source, which can retain good electric contact between CNT and a cathode electrode, by containing an electrically conductive particle having a particle diameter within the optimal range. A paste for an electron emission source containing a carbon nanotube having a diameter of 1 nm or more and less than 10 nm, and an electrically conductive part having an average particle diameter of 0.1 to 1 μm.

摘要翻译： 本发明的目的是提供一种用于电子发射源的糊状物，其通过含有粒径在最佳范围内的导电颗粒，可以保持CNT与阴极之间良好的电接触。 一种含有直径为1nm以上且小于10nm的碳纳米管的电子发射源用糊料，平均粒径为0.1〜1μm的导电部件。