发明申请
- 专利标题: GAIN CELL MEMORY HAVING READ CYCLE INTERLOCK
- 专利标题(中): 具有读取周期互锁的增益单元存储器
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申请号: US10604374申请日: 2003-07-15
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公开(公告)号: US20050024923A1公开(公告)日: 2005-02-03
- 发明人: Hoki Kim , Toshiaki Kirihata
- 申请人: Hoki Kim , Toshiaki Kirihata
- 申请人地址: US NY Armonk
- 专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址: US NY Armonk
- 主分类号: G11C7/00
- IPC分类号: G11C7/00 ; G11C7/22 ; G11C8/00 ; G11C11/24 ; G11C11/408 ; G11C11/409 ; G11C11/4091
摘要:
A method is provided for accessing a storage cell of a dynamic random access memory (DRAM) having an array of gain cells being read accessible by a read wordline and a read bitline, and being write accessible by a write wordline and write bitline separate from said read wordline and read bitline. The method includes activating a read wordline of the array of gain cells to permit signals from a plurality of gain cells coupled to the read wordline to develop on a plurality of corresponding read bitlines coupled to the gain cells. An interlock signal is then generated in the DRAM after activating the read wordline. The read wordline is then deactivated in response to the interlock signal.
公开/授权文献
- US06947348B2 Gain cell memory having read cycle interlock 公开/授权日:2005-09-20
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