Invention Application
- Patent Title: Techniques for curvature control in power transistor devices
- Patent Title (中): 功率晶体管器件中曲率控制技术
-
Application No.: US10628941Application Date: 2003-07-29
-
Publication No.: US20050026332A1Publication Date: 2005-02-03
- Inventor: Roger Fratti , Warren Waskiewicz
- Applicant: Roger Fratti , Warren Waskiewicz
- Main IPC: H01L21/306
- IPC: H01L21/306 ; H01L21/331 ; H01L21/332 ; H01L23/31 ; H01L29/06 ; H01L21/336
Abstract:
Techniques for processing power transistor devices are provided. In one aspect, the curvature of a power transistor device comprising a device film formed on a substrate is controlled by thinning the substrate, the device having an overall residual stress attributable at least in part to the thinning step, and applying a stress compensation layer to a surface of the device film, the stress compensation layer having a tensile stress sufficient to counterbalance at least a portion of the overall residual stress of the device. The resultant power transistor device may be part of an integrated circuit.
Information query
IPC分类:
