Invention Application
- Patent Title: Method for fabricating poly patterns
- Patent Title (中): 多模式制作方法
-
Application No.: US10631251Application Date: 2003-07-31
-
Publication No.: US20050026406A1Publication Date: 2005-02-03
- Inventor: Ching-Chen Hao , Hung-Jen Lin , Min-Hwa Chi , Chih-Heng Shen
- Applicant: Ching-Chen Hao , Hung-Jen Lin , Min-Hwa Chi , Chih-Heng Shen
- Main IPC: H01L21/027
- IPC: H01L21/027 ; H01L21/28 ; H01L21/283 ; H01L21/31 ; H01L21/3213 ; H01L21/336 ; H01L21/4763 ; H01L21/8234 ; H01L21/8238
Abstract:
A method of fabricating polysilicon patterns. The method includes depositing polysilicon on a substrate. The polysilicon may be doped or pre-doped depending upon the application. A mask layer is applied and patterned. Thereafter, the polysilicon is etched to form the polysilicon patterns and an oxidizing step is performed. The mask layer is removed after the oxidizing step is performed.
Public/Granted literature
- US06949471B2 Method for fabricating poly patterns Public/Granted day:2005-09-27
Information query
IPC分类:
