发明申请
- 专利标题： Method of detaching a layer from a wafer using a localized starting area
- 专利标题（中）： 使用局部起始区域从晶片分离层的方法
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申请号： US10766207申请日： 2004-01-29
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公开(公告)号： US20050028727A1公开(公告)日： 2005-02-10
- 发明人: Walter Schwarzenbach , Christophe Maleville , Nadia Ben Mohamed
- 申请人： Walter Schwarzenbach , Christophe Maleville , Nadia Ben Mohamed
- 优先权： FR0309597 20030804
- 主分类号： H01L21/762
- IPC分类号： H01L21/762 ; C30B23/00 ; C30B25/00 ; C30B28/12 ; C30B28/14
摘要：
A method for detaching a layer from a wafer. A weakened zone is created in the wafer to define the layer to be detached and a remainder portion of the wafer, such that the weakened zone includes a main region and a localized super-weakened region that is more weakened than the main region. Detachment of the layer from the remainder portion of the wafer is initiated at the super-weakened region such that the detachment properties to the main region to detach the layer from the remainder portion.