公开(公告)号：US20130130473A1

公开(公告)日：2013-05-23

申请号：US13714792

申请日：2012-12-14

申请人： Nadia Ben Mohamed ,  Ta-Ko Chuang ,  Jeffrey Scott Cites ,  Daniel Delprat ,  Alex Usenko

发明人： Nadia Ben Mohamed ,  Ta-Ko Chuang ,  Jeffrey Scott Cites ,  Daniel Delprat ,  Alex Usenko

IPC分类号： H01L21/762

CPC分类号： H01L29/02 ,  H01L21/185 ,  H01L21/762 ,  H01L21/76254

摘要： A semiconductor-on-glass substrate having a relatively stiff (e.g. relatively high Young's modulus of 125 or higher) stiffening layer or layers placed between the silicon film and the glass in order to eliminate the canyons and pin holes that otherwise form in the surface of the transferred silicon film during the ion implantation thin film transfer process. The new stiffening layer may be formed of a material, such as silicon nitride, that also serves as an efficient barrier against penetration of sodium and other harmful impurities from the glass substrate into the silicon film.

摘要翻译： 一种半导体玻璃衬底，其具有相对较硬（例如相对较高的杨氏模量为125或更高）的加强层或者放置在硅膜和玻璃之间的层，以消除否则在表面上形成的峡谷和针孔 在离子注入薄膜转移过程中转移的硅膜。 新的加强层可以由诸如氮化硅的材料形成，其也用作有效阻挡钠和其它有害杂质从玻璃基板渗透到硅膜中的有效屏障。

公开(公告)号：US08349703B2

公开(公告)日：2013-01-08

申请号：US12525493

申请日：2007-11-23

申请人： Sébastien Kerdiles ,  Willy Michel ,  Walter Schwarzenbach ,  Daniel Delprat ,  Nadia Ben Mohamed

发明人： Sébastien Kerdiles ,  Willy Michel ,  Walter Schwarzenbach ,  Daniel Delprat ,  Nadia Ben Mohamed

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L21/2007 ,  H01L21/02052

摘要： The invention relates to a method of forming a structure comprising a thin layer of semiconductor material transferred from a donor substrate onto a second substrate, wherein two different atomic species are co-implanted under certain conditions into the donor substrate so as to create a weakened zone delimiting the thin layer to be transferred. The two different atomic species are implanted so that their peaks have an offset of less than 200 Å in the donor substrate, and the substrates are bonded together after roughening at least one of the bonding surfaces.

摘要翻译： 本发明涉及一种形成结构的方法，该结构包括从施主衬底转移到第二衬底上的半导体材料的薄层，其中两种不同的原子种类在一定条件下共注入到施主衬底中，以便产生弱化区 限定待传输的薄层。 植入两种不同的原子物质，使得它们的峰在施主衬底中具有小于200的偏移，并且在粗糙化至少一个结合表面之后将衬底粘合在一起。

公开(公告)号：US20110312156A1

公开(公告)日：2011-12-22

申请号：US12599680

申请日：2009-03-26

申请人： Sébastien Cattet ,  Lise Guerrini ,  Nadia Ben Mohamed ,  Benjamin Scarfogliere

发明人： Sébastien Cattet ,  Lise Guerrini ,  Nadia Ben Mohamed ,  Benjamin Scarfogliere

IPC分类号： H01L21/762

CPC分类号： H01L21/76254 ,  H01L21/187 ,  H01L21/67248 ,  H01L21/68714

摘要： In order to reduce and render uniform the surface roughness and variations in thickness of a layer after detachment (post-fracture) of a donor substrate, the mean temperature of the donor substrate during implantation thereof is controlled so as to be in the range 20° C. to 150° C. with a maximum temperature variation of less than 30° C.

摘要翻译： 为了在施主衬底的剥离（后断裂）之后减小并使其均匀的表面粗糙度和厚度变化，施主衬底的施加衬底的平均温度被控制在20°的范围内 C.至150℃，最高温度变化小于30℃

公开(公告)号：US20100093152A1

公开(公告)日：2010-04-15

申请号：US12525493

申请日：2007-11-23

申请人： Sébastien Kerdiles ,  Willy Michel ,  Walter Schwarzenbach ,  Daniel Delprat ,  Nadia Ben Mohamed

发明人： Sébastien Kerdiles ,  Willy Michel ,  Walter Schwarzenbach ,  Daniel Delprat ,  Nadia Ben Mohamed

IPC分类号： H01L21/30

CPC分类号： H01L21/2007 ,  H01L21/02052

摘要： The invention relates to a method of forming a structure comprising a thin layer of semiconductor material transferred from a donor substrate onto a second substrate, wherein two different atomic species are co-implanted under certain conditions into the donor substrate so as to create a weakened zone delimiting the thin layer to be transferred. The two different atomic species are implanted so that their peaks have an offset of less than 200 Å in the donor substrate, and the substrates are bonded together after roughening at least one of the bonding surfaces.

摘要翻译： 本发明涉及一种形成结构的方法，该结构包括从施主衬底转移到第二衬底上的半导体材料的薄层，其中两种不同的原子种类在一定条件下共注入到施主衬底中，以便产生弱化区 限定待传输的薄层。 植入两种不同的原子物质，使得它们的峰在施主衬底中具有小于200的偏移，并且在粗糙化至少一个结合表面之后将衬底粘合在一起。

公开(公告)号：US20070117229A1

公开(公告)日：2007-05-24

申请号：US11624867

申请日：2007-01-19

申请人： Walter Schwarzenbach ,  Nadia Ben Mohamed ,  Christophe Maleville ,  Corinne Maunand Tussot

发明人： Walter Schwarzenbach ,  Nadia Ben Mohamed ,  Christophe Maleville ,  Corinne Maunand Tussot

IPC分类号： H01L21/66

CPC分类号： H01L21/76254 ,  H01L21/76251

摘要： A method for minimizing defects when transferring a useful layer from a donor wafer to a receptor wafer is described. The method includes providing a donor wafer having a surface below which a zone of weakness is present to define a useful layer to be transferred, molecularly bonding at a bonding interface the surface of the useful layer of the donor wafer to a surface of the receptor wafer to form a structure, heating the structure at a first temperature that is substantially higher than ambient temperature for a first time period sufficient to liberate water molecules from the bonding interface, with the heating being insufficient to cause detachment of the useful layer at the zone of weakness, and detaching the useful layer from the donor wafer.

摘要翻译： 描述了当将有用层从施主晶片转移到受体晶片时最小化缺陷的方法。 该方法包括提供具有表面的施主晶片，在该表面之下存在弱化区以限定待转移的有用层，在施主晶片的有用层的表面的接合界面处分子结合到受体晶片的表面 以形成结构，在基本上高于环境温度的第一温度下将结构加热足以从结合界面释放水分子的第一时间段，其中加热不足以引起有用层在区域 无力，并从供体晶片上分离有用层。

公开(公告)号：US07176108B2

公开(公告)日：2007-02-13

申请号：US10703694

申请日：2003-11-06

申请人： Ian Cayrefourcq ,  Nadia Ben Mohamed ,  Christelle Lagahe-Blanchard ,  Nguyet-Phuong Nguyen

发明人： Ian Cayrefourcq ,  Nadia Ben Mohamed ,  Christelle Lagahe-Blanchard ,  Nguyet-Phuong Nguyen

IPC分类号： H01L21/30 ,  H01L21/425

CPC分类号： H01L21/76254

摘要： A method of detaching a thin film from a source substrate comprises the steps of implanting ions or gaseous species in the source substrate so as to form therein a buried zone weakened by the presence of defects; and splitting in the weakened zone leading to the detachment of the thin film from the source substrate. Two species are implanted of which one is adapted to form defects and the other is adapted to occupy those defects, the detachment being made at a temperature lower than that for which detachment could be obtained with solely the dose of the first species.

摘要翻译： 从源底层分离薄膜的方法包括以下步骤：在源极衬底中注入离子或气态物质，以便在其中形成由于存在缺陷而被削弱的掩埋区; 并且在弱化区域中分裂，导致薄膜与源基板分离。 植入两种植物，其中一种适于形成缺陷，另一种适于占据这些缺陷，该脱离是在低于仅以第一种的剂量获得脱离的温度的温度下进行的。

公开(公告)号：US20060223283A1

公开(公告)日：2006-10-05

申请号：US11446357

申请日：2006-06-05

申请人： Christophe Maleville ,  Eric Neyret ,  Nadia Ben Mohamed

发明人： Christophe Maleville ,  Eric Neyret ,  Nadia Ben Mohamed

IPC分类号： H01L21/30

CPC分类号： H01L21/76254 ,  H01L21/324

摘要： A method for producing a high quality useful layer of semiconductor material on a substrate. The method includes implanting at least two different atomic species into a face of a donor substrate to a controlled mean implantation depth to form a weakened zone therein and to define a useful layer. The implanting step is conducted to minimize low-frequency roughness at the weakened zone. Next, the method includes bonding a support substrate to the face of the donor substrate, and detaching the useful layer from the donor substrate along the weakened zone. A structure is thus formed that includes the useful layer on the support substrate with the useful layer presenting a surface for further processing. The technique also includes thermally treating the structure to minimize high-frequency roughness of the surface of the useful layer. The result is a surface having sufficient smoothness so that chemical mechanical polishing (CMP) is not needed.

摘要翻译： 一种用于在基板上制造高质量半导体材料有用层的方法。 该方法包括将至少两种不同的原子物质植入施主衬底的表面至受控的平均注入深度以在其中形成弱化区域并限定有用层。 进行植入步骤以使弱化区域的低频粗糙度最小化。 接下来，该方法包括将支撑衬底接合到施主衬底的表面，以及沿着弱化区从施主衬底分离有用层。 因此形成了在支撑基板上包括有用层的结构，其中有用层具有用于进一步处理的表面。 该技术还包括热处理该结构以最小化有用层的表面的高频粗糙度。 结果是具有足够平滑度的表面，使得不需要化学机械抛光（CMP）。

公开(公告)号：US20100176493A1

公开(公告)日：2010-07-15

申请号：US12676320

申请日：2008-10-21

申请人： Nadia Ben Mohamed ,  Sébastien Kerdiles

发明人： Nadia Ben Mohamed ,  Sébastien Kerdiles

IPC分类号： H01L23/544 ,  H01L21/02

CPC分类号： H01L21/187 ,  H01L21/76254

摘要： A process for splitting a semiconductor substrate having an identification notch on its periphery, by creating a weakened zone in the substrate by implanting atomic species into the substrate while the substrate is held in place on a portion of its periphery during the implanting; and splitting the substrate along the weakened zone by placing the held portion of the substrate in a splitting-wave initiation sector while positioning the notch for initiating a splitting wave followed by the propagation of the wave into the substrate. During splitting the notch is positioned so that it is in a quarter of the periphery of the substrate diametrically opposite the sector for initiating the splitting wave or in the quarter of the periphery of the substrate that is centered on the sector.

摘要翻译： 一种通过在植入期间将衬底保持在其周边的一部分上保持在适当位置的情况下通过将原子物质注入到衬底中而在衬底中产生弱化区域来分裂其外围具有识别缺口的半导体衬底的工艺; 以及通过将衬底的保持部分放置在分裂波起始扇区中并沿着弱化区域分裂衬底，同时定位用于引发分裂波的陷波，随后将波传播到衬底中。 在分割期间，凹口被定位成使得其位于衬底周边的四分之一处，与衬底的圆周方向相反，用于引发分裂波，或者位于以扇形为中心的衬底周边的四分之一部分中。

公开(公告)号：US07749862B2

公开(公告)日：2010-07-06

申请号：US11624867

申请日：2007-01-19

申请人： Walter Schwarzenbach ,  Nadia Ben Mohamed ,  Christophe Maleville ,  Corinne Maunand Tussot

发明人： Walter Schwarzenbach ,  Nadia Ben Mohamed ,  Christophe Maleville ,  Corinne Maunand Tussot

IPC分类号： H01L21/30

CPC分类号： H01L21/76254 ,  H01L21/76251

摘要： A method for minimizing defects when transferring a useful layer from a donor wafer to a receptor wafer is described. The method includes providing a donor wafer having a surface below which a zone of weakness is present to define a useful layer to be transferred, molecularly bonding at a bonding interface the surface of the useful layer of the donor wafer to a surface of the receptor wafer to form a structure, heating the structure at a first temperature that is substantially higher than ambient temperature for a first time period sufficient to liberate water molecules from the bonding interface, with the heating being insufficient to cause detachment of the useful layer at the zone of weakness, and detaching the useful layer from the donor wafer.

摘要翻译： 描述了当将有用层从施主晶片转移到受体晶片时最小化缺陷的方法。 该方法包括提供具有表面的施主晶片，在该表面之下存在弱化区以限定待转移的有用层，在施主晶片的有用层的表面的接合界面处分子结合到受体晶片的表面 以形成结构，在基本上高于环境温度的第一温度下将结构加热足以从结合界面释放水分子的第一时间段，其中加热不足以引起有用层在区域 无力，并从供体晶片上分离有用层。

公开(公告)号：US20100105217A1

公开(公告)日：2010-04-29

申请号：US12529482

申请日：2008-03-18

申请人： Walter Schwarzenbach ,  Nadia Ben Mohamed ,  Fleur Guittard

发明人： Walter Schwarzenbach ,  Nadia Ben Mohamed ,  Fleur Guittard

IPC分类号： H01L21/762

CPC分类号： H01L21/76254

摘要： A method of detaching two substrates at the embrittlement zone situated at a given depth of one of the two substrates. The method includes a separation annealing step implemented in a furnace, wherein the annealing includes a first phase during which the temperature changes along an upgrade allowing a high temperature to be reached and annealing at this high temperature to be stabilized, and a second phase during which the temperature changes along a downgrade, at the end of which the furnace is opened to unload the substrates from the furnace. The second phase is regulated so as to minimize temperature inhomogeneities such as cleavage defects at the detached surfaces of the substrates when the furnace is opened.

摘要翻译： 在位于两个基板之一的给定深度的脆化区处分离两个基板的方法。 该方法包括在炉中实现的分离退火步骤，其中退火包括第一阶段，在该阶段期间温度沿升级变化，允许达到高温并在该高温下进行退火以使其稳定，在第二阶段期间 温度沿着降级而变化，其末端打开炉子以从炉中卸载基板。 调节第二相以便在炉子打开时使温度不均匀性最小化，例如在基板的分离表面处的裂纹缺陷。