发明申请
US20050029571A1 Method of producing rough polysilicon by the use of pulsed plasma chemical vapor deposition and products produced by same
审中-公开
通过使用脉冲等离子体化学气相沉积法生产粗多晶硅的方法及其制备的产品
- 专利标题： Method of producing rough polysilicon by the use of pulsed plasma chemical vapor deposition and products produced by same
- 专利标题（中）： 通过使用脉冲等离子体化学气相沉积法生产粗多晶硅的方法及其制备的产品
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申请号： US10930521申请日： 2004-08-31
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公开(公告)号： US20050029571A1公开(公告)日： 2005-02-10
- 发明人: Gurtej Sandhu , Trung Doan
- 申请人： Gurtej Sandhu , Trung Doan
- 主分类号： C23C16/24
- IPC分类号： C23C16/24 ; C23C16/515 ; H01L21/02 ; H01L21/285 ; H01L21/8242 ; H01L29/94
摘要：
A method for depositing a rough polysilicon film on a substrate is disclosed. The method includes introducing the reactant gases argon and silane into a deposition chamber and enabling and disabling a plasma at various times during the deposition process.
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