公开(公告)号：US20060144333A1

公开(公告)日：2006-07-06

申请号：US11364738

申请日：2006-02-28

申请人： Trung Doan ,  Gurtej Sandhu

发明人： Trung Doan ,  Gurtej Sandhu

IPC分类号： C23C16/00

CPC分类号： C23C16/45544 ,  C23C16/4412 ,  C30B25/02 ,  H01L21/67017

摘要： An atomic layer deposition method includes positioning a semiconductor substrate within an atomic layer deposition chamber. A first deposition precursor is fed to the chamber under first vacuum conditions effective to form a first monolayer on the substrate. The first vacuum conditions are maintained at least in part by a first non-roughing vacuum pump connected to the chamber and through which at least some of the first deposition precursor flows. After forming the first monolayer, a purge gas is fed to the chamber under second vacuum conditions maintained at least in part by a second non-roughing vacuum pump connected to the chamber which is different from the first non-roughing vacuum pump and through which at least some of the purge gas flows. An atomic layer deposition apparatus is disclosed.

公开(公告)号：US20060029738A1

公开(公告)日：2006-02-09

申请号：US11241486

申请日：2005-09-29

申请人： Trung Doan ,  Guy Blalock ,  Gurtej Sandhu

发明人： Trung Doan ,  Guy Blalock ,  Gurtej Sandhu

IPC分类号： C23C16/00

CPC分类号： H01L21/0228 ,  C23C16/38 ,  C23C16/403 ,  C23C16/45542 ,  C23C16/515 ,  H01L21/02178 ,  H01L21/02183 ,  H01L21/02186 ,  H01L21/02205 ,  H01L21/02274 ,  H01L21/28562 ,  H01L21/3141 ,  H01L21/31616 ,  H01L21/31683 ,  H01L21/76841

摘要： A first precursor gas is flowed to the substrate within the chamber effective to form a first monolayer on the substrate. A second precursor gas different in composition from the first precursor gas is flowed to the first monolayer within the chamber under surface microwave plasma conditions within the chamber effective to react with the first monolayer and form a second monolayer on the substrate which is different in composition from the first monolayer. The second monolayer includes components of the first monolayer and the second precursor. In one implementation, the first and second precursor flowings are successively repeated effective to form a mass of material on the substrate of the second monolayer composition. Additional and other implementations are contemplated.

公开(公告)号：US20050260854A1

公开(公告)日：2005-11-24

申请号：US10629011

申请日：2003-07-28

申请人： Trung Doan ,  Guy Blalock ,  Gurtej Sandhu

发明人： Trung Doan ,  Guy Blalock ,  Gurtej Sandhu

IPC分类号： C23C16/38 ,  C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  H01L21/285 ,  H01L21/314 ,  H01L21/316 ,  H01L21/768 ,  H01L21/44 ,  H01L21/31 ,  H01L21/469

CPC分类号： H01L21/0228 ,  C23C16/38 ,  C23C16/403 ,  C23C16/45542 ,  C23C16/515 ,  H01L21/02178 ,  H01L21/02183 ,  H01L21/02186 ,  H01L21/02205 ,  H01L21/02274 ,  H01L21/28562 ,  H01L21/3141 ,  H01L21/31616 ,  H01L21/31683 ,  H01L21/76841

摘要： A first precursor gas is flowed to the substrate within the chamber effective to form a first monolayer on the substrate. A second precursor gas different in composition from the first precursor gas is flowed to the first monolayer within the chamber under surface microwave plasma conditions within the chamber effective to react with the first monolayer and form a second monolayer on the substrate which is different in composition from the first monolayer. The second monolayer includes components of the first monolayer and the second precursor. In one implementation, the first and second precursor flowings are successively repeated effective to form a mass of material on the substrate of the second monolayer composition. Additional and other implementations are contemplated.

摘要翻译： 第一前体气体流入室内的衬底，有效地在衬底上形成第一单层。 在室内的表面微波等离子体条件下，与第一前体气体不同组成的第二前体气体流入腔室内的第一单层，有效地与第一单层反应并在基底上形成第二单层，其在组成上不同 第一个单层。 第二单层包括第一单层和第二前体的组分。 在一个实施方案中，第一和第二前体流动被连续重复有效地在第二单层组合物的基底上形成大量材料。 考虑附加和其他实现。

公开(公告)号：US20050239265A1

公开(公告)日：2005-10-27

申请号：US11170452

申请日：2005-06-29

申请人： Trung Doan ,  Gurtej Sandhu

发明人： Trung Doan ,  Gurtej Sandhu

IPC分类号： H01L21/76 ,  H01L21/762

CPC分类号： H01L21/76224

摘要： In accordance with an aspect of the invention, a method of forming a trench isolation region includes forming a trench within a substrate. A silanol layer is formed to partially fill the trench and then converted, at least some of the silanol, to a compound including at least one of SiOn and RSiOn, where R includes an organic group. An electrically insulative material is formed over the converted silanol to fill the trench. In another aspect of the invention, a method of forming a trench isolation region includes forming a trench within a substrate. A first layer of at least one of Si(OH)x and (CH3)ySi(OH)4-y is formed to partially fill the trench. At least some of the Si(OH)x if present is converted to SiO2 and at least some of (CH3)ySi(OH)4-y if present is converted to (CH3)xSiO2-x. Next, a layer of an electrically insulative material is formed to fill the trench.

摘要翻译： 根据本发明的一个方面，形成沟槽隔离区域的方法包括在衬底内形成沟槽。 形成硅烷醇层以部分地填充沟槽，然后将至少一些硅烷醇转化成包括SiO 2和RSiO n N的至少一种的化合物，其中 R包括有机基团。 在转化的硅烷醇上形成电绝缘材料以填充沟槽。 在本发明的另一方面，形成沟槽隔离区域的方法包括在衬底内形成沟槽。 Si（OH）x和（CH 3）3 Si（OH）4-y中的至少一种的第一层 形成为部分地填充沟槽。 如果存在的话，至少有一些Si（OH）x X x被转化为SiO 2，并且至少一些（CH 3 3） 如果存在，则将Si（OH）4-y X转化为（CH 3 3）x SiO 2-x 。 接下来，形成电绝缘材料层以填充沟槽。

公开(公告)号：US20050029571A1

公开(公告)日：2005-02-10

申请号：US10930521

申请日：2004-08-31

申请人： Gurtej Sandhu ,  Trung Doan

发明人： Gurtej Sandhu ,  Trung Doan

IPC分类号： C23C16/24 ,  C23C16/515 ,  H01L21/02 ,  H01L21/285 ,  H01L21/8242 ,  H01L29/94

CPC分类号： H01L28/82 ,  C23C16/24 ,  C23C16/515 ,  H01L21/28525 ,  Y10S438/964

摘要： A method for depositing a rough polysilicon film on a substrate is disclosed. The method includes introducing the reactant gases argon and silane into a deposition chamber and enabling and disabling a plasma at various times during the deposition process.

摘要翻译： 公开了一种在基板上沉积粗多晶硅膜的方法。 该方法包括将反应气体氩和硅烷引入沉积室，并且在沉积过程中在不同时间启用和禁用等离子体。

公开(公告)号：US20050029570A1

公开(公告)日：2005-02-10

申请号：US10930443

申请日：2004-08-31

申请人： Gurtej Sandhu ,  Trung Doan

发明人： Gurtej Sandhu ,  Trung Doan

IPC分类号： C23C16/24 ,  C23C16/515 ,  H01L21/02 ,  H01L21/285 ,  H01L27/108 ,  C30B1/00 ,  H01L21/20 ,  H01L29/76

CPC分类号： H01L28/82 ,  C23C16/24 ,  C23C16/515 ,  H01L21/28525 ,  Y10S438/964

摘要： A method for depositing a rough polysilicon film on a substrate is disclosed. The method includes introducing the reactant gases argon and silane into a deposition chamber and enabling and disabling a plasma at various times during the deposition process.

公开(公告)号：US20050239266A1

公开(公告)日：2005-10-27

申请号：US11170522

申请日：2005-06-29

申请人： Trung Doan ,  Gurtej Sandhu

发明人： Trung Doan ,  Gurtej Sandhu

IPC分类号： H01L21/76 ,  H01L21/762

CPC分类号： H01L21/76224

摘要： In accordance with an aspect of the invention, a method of forming a trench isolation region includes forming a trench within a substrate. A silanol layer is formed to partially fill the trench and then converted, at least some of the silanol, to a compound including at least one of SiOn and RSiOn, where R includes an organic group. An electrically insulative material is formed over the converted silanol to fill the trench. In another aspect of the invention, a method of forming a trench isolation region includes forming a trench within a substrate. A first layer of at least one of Si(OH)x and (CH3)ySi(OH)4-y is formed to partially fill the trench. At least some of the Si(OH), if present is converted to SiO2 and at least some of (CH3)ySi(OH)4-y if present is converted to (CH3)xSiO2-x. Next, a layer of an electrically insulative material is formed to fill the trench.

摘要翻译： 根据本发明的一个方面，形成沟槽隔离区域的方法包括在衬底内形成沟槽。 形成硅烷醇层以部分地填充沟槽，然后将至少一些硅烷醇转化成包括SiO 2和RSiO n N的至少一种的化合物，其中 R包括有机基团。 在转化的硅烷醇上形成电绝缘材料以填充沟槽。 在本发明的另一方面，形成沟槽隔离区域的方法包括在衬底内形成沟槽。 Si（OH）x和（CH 3）3 Si（OH）4-y中的至少一种的第一层 形成为部分地填充沟槽。 如果存在Si（OH）中的至少一些，则转化为SiO 2和至少一些（CH 3）3 Si（Si） OH）4-y（如果存在）转化为（CH 3 3）x SiO 2 -X

公开(公告)号：US20060172534A1

公开(公告)日：2006-08-03

申请号：US11359098

申请日：2006-02-21

申请人： Trung Doan ,  Guy Blalock ,  Gurtej Sandhu

发明人： Trung Doan ,  Guy Blalock ,  Gurtej Sandhu

IPC分类号： H01L21/44

CPC分类号： H01L21/0228 ,  C23C16/38 ,  C23C16/403 ,  C23C16/45542 ,  C23C16/515 ,  H01L21/02178 ,  H01L21/02183 ,  H01L21/02186 ,  H01L21/02205 ,  H01L21/02274 ,  H01L21/28562 ,  H01L21/3141 ,  H01L21/31616 ,  H01L21/31683 ,  H01L21/76841

摘要： A first precursor gas is flowed to the substrate within the chamber effective to form a first monolayer on the substrate. A second precursor gas different in composition from the first precursor gas is flowed to the first monolayer within the chamber under surface microwave plasma conditions within the chamber effective to react with the first monolayer and form a second monolayer on the substrate which is different in composition from the first monolayer. The second monolayer includes components of the first monolayer and the second precursor. In one implementation, the first and second precursor flowings are successively repeated effective to form a mass of material on the substrate of the second monolayer composition. Additional and other implementations are contemplated.

公开(公告)号：US20050245093A1

公开(公告)日：2005-11-03

申请号：US11170809

申请日：2005-06-30

申请人： Gurtej Sandhu ,  Trung Doan

发明人： Gurtej Sandhu ,  Trung Doan

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/54 ,  H01L21/00 ,  H01L21/205 ,  H01L21/673 ,  H01L21/687 ,  C23C16/00

CPC分类号： H01L21/67167 ,  C23C16/45546 ,  C23C16/54 ,  H01L21/67098 ,  H01L21/67207 ,  H01L21/6732

摘要： An atomic layer deposition method includes positioning a plurality of semiconductor wafers into an atomic layer deposition chamber. Deposition precursor is emitted from individual gas inlets associated with individual of the wafers received within the chamber effective to form a respective monolayer onto said individual wafers received within the chamber. After forming the monolayer, purge gas is emitted from individual gas inlets associated with individual of the wafers received within the chamber. An atomic layer deposition tool includes a subatmospheric load chamber, a subatmospheric transfer chamber and a plurality of atomic layer deposition chambers. Other aspects and implementations are disclosed.

摘要翻译： 原子层沉积方法包括将多个半导体晶片定位到原子层沉积室中。 沉积前体从与室内接收的晶片的个体相关联的单个气体入口发射，有效地在相应的室内形成相应的单层。 在形成单层之后，从与容纳在室内的晶片的个体相关联的各个气体入口排出吹扫气体。 原子层沉积工具包括低于大气压的负载室，低于大气压的转移室和多个原子层沉积室。 公开了其他方面和实现。

公开(公告)号：US20050142890A1

公开(公告)日：2005-06-30

申请号：US11055487

申请日：2005-02-11

申请人： Trung Doan ,  Gurtej Sandhu

发明人： Trung Doan ,  Gurtej Sandhu

IPC分类号： C23C16/44 ,  C23C16/455 ,  C30B25/02 ,  H01L21/00 ,  H01L21/31

CPC分类号： C23C16/45544 ,  C23C16/4412 ,  C30B25/02 ,  H01L21/67017

摘要： An atomic layer deposition method includes positioning a semiconductor substrate within an atomic layer deposition chamber. A first deposition precursor is fed to the chamber under first vacuum conditions effective to form a first monolayer on the substrate. The first vacuum conditions are maintained at least in part by a first non-roughing vacuum pump connected to the chamber and through which at least some of the first deposition precursor flows. After forming the first monolayer, a purge gas is fed to the chamber under second vacuum conditions maintained at least in part by a second non-roughing vacuum pump connected to the chamber which is different from the first non-roughing vacuum pump and through which at least some of the purge gas flows. An atomic layer deposition apparatus is disclosed.