Invention Application
- Patent Title: MULTIPLE EXPOSURE METHOD FOR FORMING A PATTERNED PHOTORESIST LAYER
- Patent Title (中): 用于形成图案光栅层的多次曝光方法
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Application No.: US10637862Application Date: 2003-08-09
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Publication No.: US20050032003A1Publication Date: 2005-02-10
- Inventor: Cheng-Ming Lin
- Applicant: Cheng-Ming Lin
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Main IPC: G03C5/00
- IPC: G03C5/00 ; G03F1/00 ; G03F7/00 ; G03F7/20 ; G03F9/00

Abstract:
A method for exposing a blanket photoresist layer employs: (1) a first direct write exposure of the blanket photoresist layer to form therein an exposed peripheral sub-region of a desired exposed pattern; and (2) a second masked photoexposure of the blanket photoresist layer to form therein a masked photoexposed bulk sub-region of the desired exposed pattern which overlaps but does not extend beyond the exposed peripheral sub-region. The once masked photoexposed once direct write exposed blanket photoresist layer may be developed to form a patterned photoresist layer employed for forming a patterned opaque layer border within an opaque bordered attenuated phase shift mask.
Public/Granted literature
- US06905802B2 Multiple exposure method for forming a patterned photoresist layer Public/Granted day:2005-06-14
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