Invention Application
US20050032003A1 MULTIPLE EXPOSURE METHOD FOR FORMING A PATTERNED PHOTORESIST LAYER 失效
用于形成图案光栅层的多次曝光方法

MULTIPLE EXPOSURE METHOD FOR FORMING A PATTERNED PHOTORESIST LAYER
Abstract:
A method for exposing a blanket photoresist layer employs: (1) a first direct write exposure of the blanket photoresist layer to form therein an exposed peripheral sub-region of a desired exposed pattern; and (2) a second masked photoexposure of the blanket photoresist layer to form therein a masked photoexposed bulk sub-region of the desired exposed pattern which overlaps but does not extend beyond the exposed peripheral sub-region. The once masked photoexposed once direct write exposed blanket photoresist layer may be developed to form a patterned photoresist layer employed for forming a patterned opaque layer border within an opaque bordered attenuated phase shift mask.
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