发明申请
- 专利标题: Plasma processing apparatus using active matching
- 专利标题(中): 等离子体处理装置采用主动匹配
-
申请号: US10954074申请日: 2004-09-30
-
公开(公告)号: US20050034813A1公开(公告)日: 2005-02-17
- 发明人: Masahiro Sumiya , Naoki Yasui , Seiichi Watanabe , Hitoshi Tamura
- 申请人: Masahiro Sumiya , Naoki Yasui , Seiichi Watanabe , Hitoshi Tamura
- 优先权: JP2000-302824 20000929; JP2000-364537 20001127
- 主分类号: C23C16/507
- IPC分类号: C23C16/507 ; C23C16/509 ; C23C16/511 ; H01J37/32 ; C23F1/00
摘要:
A plasma processing apparatus having a processing chamber connected to a vacuum exhauster so that its inside pressure can be reduced by the vacuum exhauster, a gas feed unit for supplying gas into the processing chamber, a substrate electrode provided in the processing chamber and on which a sample can be placed, an RF power supply connected through a matching circuit to the substrate electrode, plasma generating means for generating plasma within the processing chamber and a voltage waveform control circuit provided within the matching circuit or between the substrate electrode and the matching circuit to flatten the voltage waveform from the RF power supply.
公开/授权文献
- US07373899B2 Plasma processing apparatus using active matching 公开/授权日:2008-05-20
信息查询
IPC分类: