Invention Application
- Patent Title: Magnetic tunnel junction and memory device including the same
- Patent Title (中): 磁隧道结和包括其的存储器件
-
Application No.: US10851387Application Date: 2004-05-24
-
Publication No.: US20050035383A1Publication Date: 2005-02-17
- Inventor: Young-Ki Ha , Jang-Eun Lee , Hyun-Jo Kim , Jun-Soo Bae , In-Gyu Baek , Se-Chung Oh
- Applicant: Young-Ki Ha , Jang-Eun Lee , Hyun-Jo Kim , Jun-Soo Bae , In-Gyu Baek , Se-Chung Oh
- Priority: KR2003-55895 20030812
- Main IPC: G11C11/15
- IPC: G11C11/15 ; H01F10/32 ; H01L43/08 ; H01L29/76
Abstract:
A magnetic tunnel junction device includes a magnetically programmable free magnetic layer. The free magnetic layer includes a lamination of at least two ferromagnetic layers and at least one intermediate layer interposed between the at least two ferromagnetic layers.
Public/Granted literature
- US07378698B2 Magnetic tunnel junction and memory device including the same Public/Granted day:2008-05-27
Information query
