发明申请
- 专利标题： Isolation structure with nitrogen-containing liner and methods of manufacture
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申请号： US10687377申请日： 2003-10-16
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公开(公告)号： US20050035426A1公开(公告)日： 2005-02-17
- 发明人: Chih-Hsin Ko , Yee-Chia Yeo , Chung-Hu Ge , Wen-Chin Lee
- 申请人： Chih-Hsin Ko , Yee-Chia Yeo , Chung-Hu Ge , Wen-Chin Lee
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L21/306 ; H01L21/76 ; H01L21/762 ; H01L21/8234 ; H01L29/78 ; H01L29/00 ; H01L21/8238
摘要：
A semiconductor isolation trench includes a substrate and a trench formed therein. The trench is lined with a nitrogen-containing liner and filled with a dielectric material. The nitrogen-containing liner preferably contacts the active region of a device, such as a transistor, located adjacent to the trench.
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