Invention Application
- Patent Title: Defect controlled nanotube sensor and method of production
- Patent Title (中): 缺陷控制的纳米管传感器和生产方法
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Application No.: US10638483Application Date: 2003-08-12
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Publication No.: US20050036905A1Publication Date: 2005-02-17
- Inventor: Halit Gokturk
- Applicant: Halit Gokturk
- Applicant Address: JP Osaka
- Assignee: MATSUSHITA ELECTRIC WORKS, LTD.
- Current Assignee: MATSUSHITA ELECTRIC WORKS, LTD.
- Current Assignee Address: JP Osaka
- Main IPC: G01L1/14
- IPC: G01L1/14 ; C01B31/02 ; G01B7/16 ; G01D21/02 ; G01K7/16 ; G01K7/34 ; G01L1/22 ; G01N1/00 ; G01N27/00 ; G01N27/04 ; G01N27/12 ; G01N27/22 ; G01N27/414

Abstract:
Sensor for detecting a physical or chemical quantity, comprising a defect controlled nanotube. The sensor can be produced by post treating a nanotube with sufficient energy to modify at least one of density and type of defects in the nanotube, and associating the nanotube with a circuit capable of providing an output signal based upon change of electrical characteristic of the nanotube in response to stimulus of the nanotube.
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