发明申请
- 专利标题: Integrating N-type and P-type metal gate transistors
- 专利标题(中): 集成N型和P型金属栅晶体管
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申请号: US10946502申请日: 2004-09-20
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公开(公告)号: US20050040469A1公开(公告)日: 2005-02-24
- 发明人: Mark Doczy , Justin Brask , Steven Keating , Chris Barns , Brian Doyle , Michael McSwiney , Jack Kavalieros , John Barnak
- 申请人: Mark Doczy , Justin Brask , Steven Keating , Chris Barns , Brian Doyle , Michael McSwiney , Jack Kavalieros , John Barnak
- 主分类号: H01L21/3213
- IPC分类号: H01L21/3213 ; H01L21/336 ; H01L21/8238 ; H01L29/49 ; H01L29/78
摘要:
At least a p-type and n-type semiconductor device deposited upon a semiconductor wafer containing metal or metal alloy gates. More particularly, a complementary metal-oxide-semiconductor (CMOS) device is formed on a semiconductor wafer having n-type and p-type metal gates.
公开/授权文献
- US06972225B2 integrating n-type and P-type metal gate transistors 公开/授权日:2005-12-06