发明申请
US20050040487A1 a-C:H ISFET device, manufacturing method, and testing methods and apparatus thereof
失效
a-C：H ISFET器件，制造方法及其测试方法和装置
- 专利标题： a-C:H ISFET device, manufacturing method, and testing methods and apparatus thereof
- 专利标题（中）： a-C：H ISFET器件，制造方法及其测试方法和装置
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申请号： US10950579申请日： 2004-09-28
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公开(公告)号： US20050040487A1公开(公告)日： 2005-02-24
- 发明人: Jung-Chuan Chou , Hsuan-Ming Tsai
- 申请人： Jung-Chuan Chou , Hsuan-Ming Tsai
- 专利权人： National Yunlin University of Science and Technology
- 当前专利权人： National Yunlin University of Science and Technology
- 优先权： TW91110544 20020520
- 主分类号： G01N27/00
- IPC分类号： G01N27/00 ; G01N27/414 ; G01R27/00 ; G01R31/02 ; H01L21/00 ; H01L21/04 ; H01L21/66 ; H01L23/58 ; H01L27/14 ; H01L29/772 ; H01L31/00
摘要：
An a-C:H ISFET device and manufacturing method thereof. The present invention prepares a-C:H as the detection membrane of an ISFET by plasma enhanced low pressure chemical vapor deposition (PE-LPCVD) to obtain an a-C:H ISFET. The present invention also measures the current-voltage curve for different pH and temperatures by a current measuring system. The temperature parameter of the a-C:H ISFET is calculated according to the relationship between the current-voltage curve and temperature. In addition, the drift rates of the a-C:H ISFET for different pH and hysteresis width of the a-C:H ISFET for different pH loops are calculated by a constant voltage/current circuit and a voltage-time recorder to measure the gate voltage of the a-C:H ISFET.
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