Invention Application
- Patent Title: Method for manipulating the topography of a film surface
- Patent Title (中): 操纵膜表面形貌的方法
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Application No.: US10644356Application Date: 2003-08-19
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Publication No.: US20050042552A1Publication Date: 2005-02-24
- Inventor: Tsai-Sheng Gau , Burn Lin
- Applicant: Tsai-Sheng Gau , Burn Lin
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Main IPC: G03F7/00
- IPC: G03F7/00 ; G03F7/20 ; G03F7/40

Abstract:
A method for selectively altering a thickness of a radiation sensitive polymer layer including providing a substrate including at least one radiation sensitive polymer layer having a first thickness topography; exposing the at least one radiation sensitive polymer layer through a mask having a predetermined radiant energy transmittance distribution to selectively expose predetermined areas of the at least one sensitive polymer layer to predetermined radiant energy dosages; and, developing the at least one radiation sensitive polymer layer to alter the first thickness topography of the at least one radiation sensitive polymer layer to produce a second thickness topography.
Public/Granted literature
- US07279267B2 Method for manipulating the topography of a film surface Public/Granted day:2007-10-09
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