发明申请
US20050042864A1 Ohmic contact structure and method for the production of the same
审中-公开
欧姆接触结构及其制作方法相同
- 专利标题： Ohmic contact structure and method for the production of the same
- 专利标题（中）： 欧姆接触结构及其制作方法相同
-
申请号： US10495620申请日： 2002-11-12
-
公开(公告)号： US20050042864A1公开(公告)日： 2005-02-24
- 发明人: Georg Bruderl , Berthold Hahn , Volker Harle , Hans-Jurgen Lugauer , Uwe Strauss , Andreas Weimar
- 申请人： Georg Bruderl , Berthold Hahn , Volker Harle , Hans-Jurgen Lugauer , Uwe Strauss , Andreas Weimar
- 优先权： DE10155442.7 20011112
- 国际申请： PCT/DE02/04178 WO 20021112
- 主分类号： H01S5/042
- IPC分类号： H01S5/042 ; H01L21/285 ; H01L21/363 ; H01L29/20 ; H01L29/45 ; H01L33/14 ; H01L33/32 ; H01L33/40 ; H01L21/44 ; H01L23/48 ; H01L23/52 ; H01L29/40
摘要：
An ohmic contact structure having a metallization (14) arranged on a semiconductor material (10), a contact layer being formed in the semiconductor material (10), which contact layer has a first partial region adjoining the metallization (14) and a second partial region (18) arranged downstream of the first partial region. The contact layer is doped in such a way that the doping concentration (N2) in the first partial region (12) is greater than the doping concentration (N1) in the second partial region (18).
信息查询
