发明申请
US20050042871A1 Multi-layer hard mask structure for etching deep trench in substrate
有权
用于蚀刻衬底深沟槽的多层硬掩模结构
- 专利标题: Multi-layer hard mask structure for etching deep trench in substrate
- 专利标题(中): 用于蚀刻衬底深沟槽的多层硬掩模结构
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申请号: US10727790申请日: 2003-12-04
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公开(公告)号: US20050042871A1公开(公告)日: 2005-02-24
- 发明人: Kaan-Lu Tzou , Tzu-Ching Tsai , Yi-Nan Chen
- 申请人: Kaan-Lu Tzou , Tzu-Ching Tsai , Yi-Nan Chen
- 优先权: TW92122720 20030819
- 主分类号: C03C15/00
- IPC分类号: C03C15/00 ; H01L21/033 ; H01L21/308 ; H01L21/8242 ; B32B17/06 ; H01L21/302 ; H01L21/461
摘要:
A method for etching a deep trench in a substrate. A multi-layer hard mask structure is formed overlying the substrate, which includes a first hard mask layer and at least one second hard mask layer disposed thereon. The first hard mask layer is composed of a first boro-silicate glass (BSG) layer and an overlying first undoped silicon glass (USG) layer and the second is composed of a second BSG layer and an overlying second USG layer. A polysilicon layer is formed overlying the multi-layer hard mask structure and then etched to form an opening therein. The multi-layer hard mask structure and the underlying substrate under the opening are successively etched to simultaneously form the deep trench in the substrate and remove the polysilicon layer. The multi-layer hard mask structure is removed.