发明申请
- 专利标题： Mgo vapor deposition material and method for preparation thereof
- 专利标题（中）： 莫戈蒸气沉积材料及其制备方法
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申请号： US10496693申请日： 2002-11-29
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公开(公告)号： US20050045065A1公开(公告)日： 2005-03-03
- 发明人: Hideaki Sakurai , Ginjiro Toyoguchi , Yoshirou Kuromitsu
- 申请人： Hideaki Sakurai , Ginjiro Toyoguchi , Yoshirou Kuromitsu
- 申请人地址： JP Tokyo
- 专利权人： Mitsubishi Materials Corporation
- 当前专利权人： Mitsubishi Materials Corporation
- 当前专利权人地址： JP Tokyo
- 优先权： JP2001-367344 20011130; JP2001-36734 20011130; JP2001-367346 20011130; JP2001-367347 20011130; JP2002-335649 20021119; JP2002-335650 20021119; JP2002-335651 20021119; JP2002-335652 20021119
- 国际申请： PCT/JP02/12541 WO 20021129
- 主分类号： C04B35/04
- IPC分类号： C04B35/04 ; C04B35/053 ; C23C14/08 ; C09D1/00
摘要：
Polycrystals with a MgO purity of at least 99.0%, a relative density of at least 90.0%, a sulfur S content of 0.01 to 50 ppm, a chlorine Cl content of 0.01 to 50 ppm, a nitrogen N content of 0.01 to 200 ppm, and a phosphorus P content of 0.01 to 30 ppm. Even when vapor deposition is conducted using electron beam deposition, almost no splash occurs, and the film characteristics of the product MgO film can also be improved.
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