发明申请
- 专利标题： THIN CHANNEL FET WITH RECESSED SOURCE/DRAINS AND EXTENSIONS
- 专利标题（中）： 具有残留源/漏极和扩展的薄沟道FET
-
申请号： US10604907申请日： 2003-08-26
-
公开(公告)号： US20050045947A1公开(公告)日： 2005-03-03
- 发明人: Huajie Chen , Bruce Doris , Philip Oldiges , Xinlin Wang , Huilong Zhu
- 申请人： Huajie Chen , Bruce Doris , Philip Oldiges , Xinlin Wang , Huilong Zhu
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L29/10 ; H01L29/786 ; H01L29/76 ; H01L29/745 ; H01L31/062
摘要：
A field effect transistor (FET), integrated circuit (IC) chip including the FETs and a method of forming the FETS. The devices have a thin channel, e.g., an ultra-thin (smaller than or equal to 10 nanometers (10 nm)) silicon on insulator (SOI) layer. Source/drain regions are located in recesses at either end of the thin channel and are substantially thicker (e.g., 30 nm) than the thin channel. Source/drain extensions and corresponding source/drain regions are self aligned to the FET gate and thin channel.
公开/授权文献
- US06924517B2 Thin channel FET with recessed source/drains and extensions 公开/授权日：2005-08-02
信息查询
IPC分类:
