发明申请
- 专利标题： Ultra-thin body transistor with recessed silicide contacts
- 专利标题（中）： 具有凹陷硅化物触点的超薄体晶体管
-
申请号： US10650445申请日： 2003-08-28
-
公开(公告)号： US20050045949A1公开(公告)日： 2005-03-03
- 发明人: Chun-Chieh Lin , Wen-Chin Lee , Yee-Chia Yeo , Chenming Hu
- 申请人： Chun-Chieh Lin , Wen-Chin Lee , Yee-Chia Yeo , Chenming Hu
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L21/84 ; H01L27/01 ; H01L29/45 ; H01L29/68 ; H01L29/786
摘要：
A semiconductor device (100), including a dielectric pedestal (220) located above and integral to a substrate (110) and having first sidewalls (230), a channel region (210) located above the dielectric pedestal (220) and having second sidewalls (240), and source and drain regions (410) opposing the channel region (210) and each substantially spanning one of the second sidewalls (240). An integrated circuit (800) incorporating the semiconductor device (100) is also disclosed, as well as a method of manufacturing the semiconductor device (100).
信息查询
IPC分类:
