Invention Application
- Patent Title: Ultra-thin body transistor with recessed silicide contacts
- Patent Title (中): 具有凹陷硅化物触点的超薄体晶体管
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Application No.: US10650445Application Date: 2003-08-28
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Publication No.: US20050045949A1Publication Date: 2005-03-03
- Inventor: Chun-Chieh Lin , Wen-Chin Lee , Yee-Chia Yeo , Chenming Hu
- Applicant: Chun-Chieh Lin , Wen-Chin Lee , Yee-Chia Yeo , Chenming Hu
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L21/84 ; H01L27/01 ; H01L29/45 ; H01L29/68 ; H01L29/786
Abstract:
A semiconductor device (100), including a dielectric pedestal (220) located above and integral to a substrate (110) and having first sidewalls (230), a channel region (210) located above the dielectric pedestal (220) and having second sidewalls (240), and source and drain regions (410) opposing the channel region (210) and each substantially spanning one of the second sidewalls (240). An integrated circuit (800) incorporating the semiconductor device (100) is also disclosed, as well as a method of manufacturing the semiconductor device (100).
Information query
IPC分类:
