Invention Application
US20050045949A1 Ultra-thin body transistor with recessed silicide contacts 审中-公开
具有凹陷硅化物触点的超薄体晶体管

Ultra-thin body transistor with recessed silicide contacts
Abstract:
A semiconductor device (100), including a dielectric pedestal (220) located above and integral to a substrate (110) and having first sidewalls (230), a channel region (210) located above the dielectric pedestal (220) and having second sidewalls (240), and source and drain regions (410) opposing the channel region (210) and each substantially spanning one of the second sidewalls (240). An integrated circuit (800) incorporating the semiconductor device (100) is also disclosed, as well as a method of manufacturing the semiconductor device (100).
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