发明申请
- 专利标题： Semiconductor device and manufacturing method thereof
- 专利标题（中）： 半导体装置及其制造方法
-
申请号： US10699676申请日： 2003-11-04
-
公开(公告)号： US20050045951A1公开(公告)日： 2005-03-03
- 发明人: Takashi Yamada , Hajime Nagano , Takeshi Hamamoto
- 申请人： Takashi Yamada , Hajime Nagano , Takeshi Hamamoto
- 优先权： JP2003-209311 20030828
- 主分类号： H01L21/76
- IPC分类号： H01L21/76 ; H01L21/762 ; H01L21/8234 ; H01L21/8247 ; H01L21/84 ; H01L27/01 ; H01L27/08 ; H01L27/088 ; H01L27/10 ; H01L27/115 ; H01L27/12 ; H01L29/788 ; H01L29/792
摘要：
A semiconductor device includes a substrate having first to fourth regions, a first insulating film formed on the substrate in the first region, a first epitaxial layer formed on the substrate in the second region and having an upper surface higher than an upper surface of the first insulating film, a first semiconductor layer formed on the first insulating film with a space provided with respect to the first epitaxial layer and having an upper surface set at substantially the same height as the upper surface of the first epitaxial layer, and an element isolation insulating film formed in the space and having an upper surface set at substantially the same height as the upper surface of the first epitaxial layer and the upper surface of the first semiconductor layer.
公开/授权文献
- US07049661B2 Semiconductor device having epitaxial layer 公开/授权日：2006-05-23
信息查询
IPC分类:
