利索-全球专利检索

  1. 登录
  2. 注册
发明申请
US20050045976A1 Room temperature ferromagnetic semiconductor grown by plasma enhanced molecular beam epitaxy and ferromagnetic semiconductor based device 失效
通过等离子体增强分子束外延和基于铁磁半导体的器件生长的室温铁磁半导体

Room temperature ferromagnetic semiconductor grown by plasma enhanced molecular beam epitaxy and ferromagnetic semiconductor based device
摘要：
A 3 group-5 group compound ferromagnetic semiconductor, comprising one material ‘A’ selected from the group of Ga, Al and In and one material ‘B’ selected from the group consisting of N and P, wherein one material ‘C’ selected from the group consisting of Mn, Mg, Co, Fe, Ni, Cr and V is doped as a material for substituting the material ‘A’, the compound semiconductor has a single phase as a whole. The ferromagnetic semiconductor can be fabricated by a plasma-enhance molecular beam epitaxy growing method and since it shows the ferromagnetic characteristics at a room temperature, it can be applied as various spin electron devices.
摘要（中）：

包含选自Ga，Al和In的一种材料“A”和选自N和P的一种材料“B”的3组5族化合物铁磁半导体，其中一种选自 掺杂有Mn，Mg，Co，Fe，Ni，Cr和V的组合作为材料“A”的材料被掺杂，化合物半导体整体上具有单相。 铁磁半导体可以通过等离子体增强分子束外延生长方法制造，并且由于其显示室温下的铁磁特性，因此可以用作各种自旋电子器件。

公开/授权文献
信息查询
Global Dossier Espacenet
0/0