Semiconductor device

Invention Application

US20050045989A1 Semiconductor device 有权

Title translation: 半导体器件

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Patent Title: Semiconductor device
Patent Title (中): 半导体器件
Application No.: US10928503

Application Date: 2004-08-27
Publication No.: US20050045989A1

Publication Date: 2005-03-03
Inventor: Tsukasa Fukui , Kaoru Ishida
Applicant: Tsukasa Fukui , Kaoru Ishida
Applicant Address: JP Kadoma-shi
Assignee: Matsushita Electric Industrial Co., Ltd.
Current Assignee: Matsushita Electric Industrial Co., Ltd.
Current Assignee Address: JP Kadoma-shi
Priority: JP2003-309197 20030901
Main IPC: H01L21/822
IPC: H01L21/822 ; H01L23/522 ; H01L27/04 ; H01L27/08 ; H01Q1/38 ; H01L21/8222 ; H01L29/00

Abstract:

A semiconductor device includes: a semiconductor substrate in which a semiconductor element is formed; a multilayer structured wiring layer that is provided on the semiconductor substrate, the wiring layer forming a structure connected with the semiconductor element; a spiral inductor that is formed in at least one layer of the wiring layer; and a connection terminal formed in an uppermost layer of the wiring layer for establishing connection from the wiring layer to an outside such as a printed board. A shielding wiring pattern is disposed between the spiral inductor and the connection terminal, the shielding wiring pattern functioning as an electromagnetic shield for the uppermost layer of the wiring layer. The shielding wiring pattern absorbs a change in electrical field caused by a potential change in the connection terminal, providing a shielding structure which suppresses the superposing of noise and an unnecessary signal onto the spiral inductor from the connection terminal.

Abstract(Chinese):

半导体器件包括：形成半导体元件的半导体衬底; 设置在所述半导体基板上的多层结构化布线层，所述布线层形成与所述半导体元件连接的结构; 形成在所述布线层的至少一层中的螺旋电感器; 以及形成在布线层的最上层的连接端子，用于建立从布线层到诸如印刷板的外部的连接。屏蔽布线图案设置在螺旋电感器和连接端子之间，屏蔽布线图形用作布线层最上层的电磁屏蔽。屏蔽布线图案吸收由连接端子的电位变化引起的电场变化，提供屏蔽结构，其抑制了从连接端子向螺旋电感器叠加噪声和不必要的信号。

Public/Granted literature

US07053461B2 Semiconductor device Public/Granted day:2006-05-30

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）