发明申请
- 专利标题： Semiconductor integrated circuit device and method for testing the same
- 专利标题（中）： 半导体集成电路器件及其测试方法
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申请号： US10928366申请日： 2004-08-30
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公开(公告)号： US20050047236A1公开(公告)日： 2005-03-03
- 发明人: Masanori Shirahama , Masashi Agata , Toshiaki Kawasaki , Ryuji Nishihara
- 申请人： Masanori Shirahama , Masashi Agata , Toshiaki Kawasaki , Ryuji Nishihara
- 专利权人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- 当前专利权人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- 优先权： JP2003-308613 20030901
- 主分类号： G11C16/02
- IPC分类号： G11C16/02 ; G11C7/06 ; G11C7/10 ; G11C16/06 ; G11C7/00 ; G11C29/00
摘要：
A semiconductor integrated circuit device includes: first and second nonvolatile memory elements; a first amplifier for amplifying an output signal from the first nonvolatile memory element to output the amplified signal; and a second amplifier for outputting to the first amplifier a control signal generated by amplifying an output signal from the second nonvolatile memory element. The second amplifier fixes the output signal from the first amplifier at a high potential or a low potential based on data stored in the second nonvolatile memory element.
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