发明申请
- 专利标题: Magnetic random access memory designs with controlled magnetic switching mechanism
- 专利标题(中): 磁性随机存取存储器设计采用受控磁切换机制
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申请号: US10647716申请日: 2003-08-25
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公开(公告)号: US20050047241A1公开(公告)日: 2005-03-03
- 发明人: Tai Min , Po Wang
- 申请人: Tai Min , Po Wang
- 专利权人: Headway Technologies, Inc.
- 当前专利权人: Headway Technologies, Inc.
- 主分类号: G11C11/15
- IPC分类号: G11C11/15 ; G11C11/16 ; G11C7/00
摘要:
An MRAM array is formed of MTJ cells shaped so as to have their narrowest dimension at the middle of the cell. A preferred embodiment forms the cell into the shape of a kidney or a peanut. Such a shape provides each cell with an artificial nucleation site at the narrowest dimension, where an applied switching field can switch the magnetization of the cell in manner that is both efficient and uniform manner across the array.
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