公开(公告)号：US20050157544A1

公开(公告)日：2005-07-21

申请号：US10761003

申请日：2004-01-20

申请人： Tai Min ,  Cheng Horng ,  Po Wang

发明人： Tai Min ,  Cheng Horng ,  Po Wang

IPC分类号： H01L27/105 ,  G11C11/14 ,  G11C11/16 ,  H01L21/8246 ,  H01L27/22 ,  H01L31/062 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

CPC分类号： H01L43/08 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/161 ,  H01F10/3218 ,  H01F10/3272 ,  H01F41/307 ,  H01L43/12

摘要： A method of forming an MTJ memory cell and/or an array of such cells is provided wherein each such cell has a small circular horizontal cross-section of 1.0 microns or less in diameter and wherein the ferromagnetic free layer of each such cell has a magnetic anisotropy produced by a magnetic coupling with a thin antiferromagnetic layer that is formed on the free layer. The MTJ memory cell so provided is far less sensitive to shape irregularities and edge defects than cells of the prior art.

摘要翻译： 提供了形成MTJ存储器单元和/或这种单元阵列的方法，其中每个这样的单元具有直径为1.0微米或更小的小的圆形水平横截面，并且其中每个这样的单元的铁磁自由层具有磁性 通过与形成在自由层上的薄的反铁磁层的磁耦合产生的各向异性。 如此提供的MTJ存储单元对于形状不规则和边缘缺陷的敏感性远低于现有技术的单元。

公开(公告)号：US20070171572A1

公开(公告)日：2007-07-26

申请号：US11716945

申请日：2007-03-12

申请人： Po Wang ,  Moris Dovek ,  Jibin Geng ,  Tai Min

发明人： Po Wang ,  Moris Dovek ,  Jibin Geng ,  Tai Min

IPC分类号： G11B5/127 ,  G11B5/33

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  C21D1/04 ,  G11B5/3903 ,  G11B5/3932 ,  G11B2005/3996 ,  H01F10/3268 ,  H01F41/302 ,  Y10T29/49032 ,  Y10T29/49034 ,  Y10T29/49043 ,  Y10T29/49044

摘要： As track density requirements for disk drives have grown more aggressive, GMR devices have been pushed to narrower track widths to match the track pitch of the drive width. Narrower track widths degrade stability, cause amplitude loss, due to the field originating from the hard bias structure, and side reading. This problem has been overcome by adding an additional layer of soft magnetic material above the hard bias layers. The added layer provides flux closure to the hard bias layers thereby preventing flux leakage into the gap region. A non-magnetic layer must be included to prevent exchange coupling to the hard bias layers. In at least one embodiment the conductive leads are used to accomplish this. A process for manufacturing the device is also described.

摘要翻译： 随着磁盘驱动器的磁道密度要求越来越高，GMR器件已被推到更窄的磁道宽度以匹配驱动器宽度的磁道间距。 较窄的轨道宽度会降低稳定性，导致振幅损失，这是由于源自硬偏置结构的场和侧读。 通过在硬偏压层上方添加一层附加的软磁材料已经克服了这个问题。 添加的层向硬偏置层提供磁通闭合，从而防止磁通量泄漏到间隙区域中。 必须包括非磁性层以防止与硬偏置层的交换耦合。 在至少一个实施例中，导电引线用于实现这一点。 还描述了用于制造该装置的方法。

公开(公告)号：US20050047241A1

公开(公告)日：2005-03-03

申请号：US10647716

申请日：2003-08-25

申请人： Tai Min ,  Po Wang

发明人： Tai Min ,  Po Wang

IPC分类号： G11C11/15 ,  G11C11/16 ,  G11C7/00

CPC分类号： G11C11/16

摘要： An MRAM array is formed of MTJ cells shaped so as to have their narrowest dimension at the middle of the cell. A preferred embodiment forms the cell into the shape of a kidney or a peanut. Such a shape provides each cell with an artificial nucleation site at the narrowest dimension, where an applied switching field can switch the magnetization of the cell in manner that is both efficient and uniform manner across the array.

摘要翻译： MRAM阵列由MTJ单元形成，其形状使得其在细胞中间具有最窄的尺寸。 优选的实施方案将细胞形成为肾或花生的形状。 这种形状为每个单元提供了最窄尺寸的人造成核位点，其中施加的切换场可以以跨过阵列的有效和均匀的方式切换单元的磁化。

公开(公告)号：US20050059170A1

公开(公告)日：2005-03-17

申请号：US10661039

申请日：2003-09-12

申请人： Tai Min ,  Po Wang

发明人： Tai Min ,  Po Wang

IPC分类号： G11C11/15 ,  H01F10/16 ,  H01F10/32 ,  H01L21/00 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/115 ,  H01L27/22 ,  H01L29/78 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

CPC分类号： G11C11/15 ,  H01L27/222 ,  H01L43/08 ,  H01L43/12

摘要： A magnetic tunneling junction (MTJ) memory cell and an MRAM array of such cells, is shielded by magnetic shields of ferromagnetic material or by ferromagnetic shields that are stabilized by patterned layers of antiferromagnetic material or permanent magnetic material. The ferromagnetic portions of the shields surround the MTJ cells substantially conformally and thereby can compensate the poles of the free layers of MTJ cells of various geometric cross-sectional shapes and also protect the cells from the adverse effects of extraneous fields. The additional antiferromagnetic and permanent magnetic materials stabilize the shields by exchange or direct coupling.

公开(公告)号：US20050045931A1

公开(公告)日：2005-03-03

申请号：US10650600

申请日：2003-08-28

申请人： Tai Min ,  Po Wang

发明人： Tai Min ,  Po Wang

IPC分类号： G11C11/16 ,  H01F10/32 ,  H01F41/30 ,  H01L43/08 ,  H01L29/76

CPC分类号： G11C11/16 ,  B82Y25/00 ,  B82Y40/00 ,  H01F10/3254 ,  H01F10/3272 ,  H01F41/308 ,  H01L43/08

摘要： A magnetic tunneling junction (MTJ) memory cell for a magnetic random access memory (MRAM) array is formed as a chain of magnetostatically coupled segments. The segments can be circular, elliptical, lozenge shaped or shaped in other geometrical forms. Unlike the isolated cells of typical MTJ designs which exhibit curling of the magnetization at the cell ends and uncompensated pole structures, the present multi-segmented design, with the segments being magnetostatically coupled, undergoes magnetization switching at controlled nucleation sites by the fanning mode. As a result, the multi-segmented cells of the present invention are not subject to variations in switching fields due to shape irregularities and structural defects.

摘要翻译： 形成磁性随机存取存储器（MRAM）阵列的磁性隧道结（MTJ）存储单元作为静磁耦合段的链。 片段可以是圆形，椭圆形，菱形形状或其他几何形状的形状。 与在单元端和未补偿的极结构处呈现卷曲的典型MTJ设计的隔离单元不同，具有磁静态耦合的段的当前多段设计在受控成核位置通过扇形模式进行磁化切换。 结果，本发明的多分段电池由于形状不规则和结构缺陷而不会发生切换场的变化。

公开(公告)号：US20070171571A1

公开(公告)日：2007-07-26

申请号：US11716869

申请日：2007-03-12

申请人： Po Wang ,  Moris Dovek ,  Jibin Geng ,  Tai Min

发明人： Po Wang ,  Moris Dovek ,  Jibin Geng ,  Tai Min

IPC分类号： G11B5/127 ,  G11B5/33

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  C21D1/04 ,  G11B5/3903 ,  G11B5/3932 ,  G11B2005/3996 ,  H01F10/3268 ,  H01F41/302 ,  Y10T29/49032 ,  Y10T29/49034 ,  Y10T29/49043 ,  Y10T29/49044

摘要： As track density requirements for disk drives have grown more aggressive, GMR devices have been pushed to narrower track widths to match the track pitch of the drive width. Narrower track widths degrade stability, cause amplitude loss, due to the field originating from the hard bias structure, and side reading. This problem has been overcome by adding an additional layer of soft magnetic material above the hard bias layers. The added layer provides flux closure to the hard bias layers thereby preventing flux leakage into the gap region. A non-magnetic layer must be included to prevent exchange coupling to the hard bias layers. In at least one embodiment the conductive leads are used to accomplish this. A process for manufacturing the device is also described.

公开(公告)号：US20050237793A1

公开(公告)日：2005-10-27

申请号：US11167852

申请日：2005-06-27

申请人： Tai Min ,  Po Wang

发明人： Tai Min ,  Po Wang

IPC分类号： G11C11/16 ,  H01F10/32 ,  H01F41/30 ,  H01L43/08 ,  G11C11/00

CPC分类号： G11C11/16 ,  B82Y25/00 ,  B82Y40/00 ,  H01F10/3254 ,  H01F10/3272 ,  H01F41/308 ,  H01L43/08

摘要： A magnetic tunneling junction (MTJ) memory cell for a magnetic random access memory (MRAM) array is formed as a chain of magnetostatically coupled segments. The segments can be circular, elliptical, lozenge shaped or shaped in other geometrical forms. Unlike the isolated cells of typical MTJ designs which exhibit curling of the magnetization at the cell ends and uncompensated pole structures, the present multi-segmented design, with the segments being magnetostatically coupled, undergoes magnetization switching at controlled nucleation sites by the fanning mode. As a result, the multi-segmented cells of the present invention are not subject to variations in switching fields due to irregularities an structural defects.

摘要翻译： 形成磁性随机存取存储器（MRAM）阵列的磁性隧道结（MTJ）存储单元作为静磁耦合段的链。 片段可以是圆形，椭圆形，菱形形状或其他几何形状的形状。 与在单元端和未补偿的极结构处呈现卷曲的典型MTJ设计的隔离单元不同，具有磁静态耦合的段的当前多段设计在受控成核位置通过扇形模式进行磁化切换。 结果，本发明的多分段电池由于不规则性而不会因结构缺陷而变化。

公开(公告)号：US20050099727A1

公开(公告)日：2005-05-12

申请号：US10706381

申请日：2003-11-12

申请人： Moris Dovek ,  Glen Garfunkel ,  Po Wang

发明人： Moris Dovek ,  Glen Garfunkel ,  Po Wang

IPC分类号： G11B5/147 ,  G11B5/265

CPC分类号： G11B5/2657 ,  Y10T29/49021 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： As track densities increase, it becomes increasingly important, while writing in a given track, not to inadvertently write data in adjoining tracks. This problem has been overcome by limiting the width of material in the ABS plane to what it is at the write gap. The part of the lower pole that is wider than this is recessed back away from the ABS, thereby greatly reducing its magnetic influence on adjacent tracks. Four different embodiments of write heads that incorporate this notion are described together with a description of a general process for their manufacture.

摘要翻译： 随着轨道密度的增加，在写入给定的轨道时，不会无意中在相邻轨道中写入数据变得越来越重要。 通过将ABS平面中的材料的宽度限制在写入间隙内，已经克服了这个问题。 比这个更宽的下极的部分从ABS背面向后凹陷，从而大大降低其对相邻轨道的磁影响。 描述了包含这一概念的写入头的四个不同实施例以及对其制造的一般过程的描述。

公开(公告)号：US20060012915A1

公开(公告)日：2006-01-19

申请号：US11229160

申请日：2005-09-16

申请人： Cherng-Chyi Han ,  Mao-Min Chen ,  Po Wang ,  Fenglin Liu

发明人： Cherng-Chyi Han ,  Mao-Min Chen ,  Po Wang ,  Fenglin Liu

IPC分类号： G11B5/147

CPC分类号： G11B5/3163 ,  G11B5/3116 ,  G11B5/3967 ,  Y10T29/49032

摘要： A trimmed upper pole piece for a magnetic write head, said pole piece having a tapered profile that is widest at its trailing edge. Such a pole piece is capable of writing narrow tracks with sharply and well defined patterns and minimal overwriting of adjacent tracks. The necessary taper is produced by using NiCr, NiFeCr, Rh or Ru as write gap filling materials which have an etch rate which is substantially equal to the etch rate of the other layers forming the pole piece and are highly corrosion resistant. As a result, the write gap does not protrude to mask the effects of the ion-beam etch used to form the taper.

摘要翻译： 用于磁写头的经修剪的上极片，所述极片具有在其后缘处最宽的锥形轮廓。 这样的极片能够以清晰明确的图案和相邻轨迹的最小重写来写入窄轨道。 通过使用NiCr，NiFeCr，Rh或Ru作为写入间隙填充材料产生必要的锥度，其具有基本上等于形成极片的其它层的蚀刻速率的蚀刻速率并且具有高耐腐蚀性。 结果，写入间隙不会突出以掩盖用于形成锥形的离子束蚀刻的效果。

公开(公告)号：US20060250866A1

公开(公告)日：2006-11-09

申请号：US11485196

申请日：2006-07-12

申请人： Hsu Yang ,  Xi Shi ,  Po Wang ,  Bruce Yang

发明人： Hsu Yang ,  Xi Shi ,  Po Wang ,  Bruce Yang

IPC分类号： G11C29/00

CPC分类号： G11C14/0081 ,  G11C11/1659 ,  G11C11/1675 ,  G11C29/02 ,  G11C29/08 ,  G11C29/50

摘要： Magnetic Random Access Memory (MRAM) can be programmed and read as fast as Static Random Access Memory (SRAM) and has the non-volatile characteristics of electrically eraseable programmable read only memory (EEPROM), FLASH EEPROM or one-time-programmable (OTP) EPROM. Due to the randomness of manufacturing process, the magnetic tunnel junctions (MTJ) in MRAM cells will require different row and column current combinations to program and not to disturb the other cells. Based on adaptive current sources for programming, this disclosure teaches methods, designs, test algorithms and manufacturing flows for generating EEPROM, FLASH EEPROM or OTP EPROM like memories from MRAM.

摘要翻译： 磁性随机存取存储器（MRAM）可以与静态随机存取存储器（SRAM）一样快速编程和读取，并且具有电可擦除可编程只读存储器（EEPROM），闪存EEPROM或一次可编程（OTP）的非易失性特性 ）EPROM。 由于制造过程的随机性，MRAM单元中的磁隧道结（MTJ）将需要不同的行和列电流组合来编程，而不会干扰其他单元。 基于用于编程的自适应电流源，本公开教导了用于从MRAM生成EEPROM，FLASH EEPROM或OTP EPROM的存储器的方法，设计，测试算法和制造流程。