发明申请
- 专利标题： Process for making silicon wafers with stabilized oxygen precipitate nucleation centers
- 专利标题（中）： 制造具有稳定氧的硅晶片的工艺沉淀成核中心
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申请号： US10963340申请日： 2004-10-12
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公开(公告)号： US20050048247A1公开(公告)日： 2005-03-03
- 发明人: Luciano Mule'Stagno , Jeffrey Libbert , Richard Phillips , Milind Kulkarni , Mohsen Banan , Stephen Brunkhorst
- 申请人： Luciano Mule'Stagno , Jeffrey Libbert , Richard Phillips , Milind Kulkarni , Mohsen Banan , Stephen Brunkhorst
- 专利权人： MEMC Electronic Materials, Inc.
- 当前专利权人： MEMC Electronic Materials, Inc.
- 主分类号： H01L21/322
- IPC分类号： H01L21/322 ; B32B3/02
摘要：
A process for imparting controlled oxygen precipitation behavior to a single crystal silicon wafer. Specifically, prior to formation of the oxygen precipitates, the wafer bulk comprises dopant stabilized oxygen precipitate nucleation centers. The dopant is selected from a group consisting of nitrogen and carbon, and the concentration of the dopant is sufficient to allow the oxygen precipitate nucleation centers to withstand thermal processing, such as an epitaxial deposition process, while maintaining the ability to dissolve any grown-in nucleation centers.
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