公开(公告)号：US20060209778A1

公开(公告)日：2006-09-21

申请号：US11440144

申请日：2006-05-23

Applicant: Gaetan Feige ,  Rabih Dabboussi ,  Kent Leung ,  Milind Kulkarni

Inventor： Gaetan Feige ,  Rabih Dabboussi ,  Kent Leung ,  Milind Kulkarni

IPC: H04Q7/24

CPC classification number: H04L29/12009 ,  H04L29/12509 ,  H04L61/2567 ,  H04W4/18 ,  H04W8/04 ,  H04W8/26 ,  H04W60/00 ,  H04W80/04

Abstract: Methods and apparatus for establishing communication between a Mobile Node and a Home Agent are disclosed. The Home Agent receives a registration request packet from the Mobile Node, the registration request packet including an IP source address and a Home Agent address. The Home Agent then detects from the registration request packet when network address translation has been performed. When it has been detected that network address translation has been performed, a tunnel is set up between the Home Agent address and the IP source address.

Abstract translation: 公开了用于建立移动节点和归属代理之间的通信的方法和装置。 归属代理从移动节点接收注册请求分组，注册请求分组包括IP源地址和归属代理地址。 当执行网络地址转换时，归属代理随后从注册请求分组中检测。 当检测到已经执行了网络地址转换时，在归属代理地址和IP源地址之间建立隧道。

公开(公告)号：US08551247B2

公开(公告)日：2013-10-08

申请号：US12537066

申请日：2009-08-06

Applicant: Hariprasad Sreedharamurthy ,  Milind Kulkarni ,  Harold W. Korb

Inventor： Hariprasad Sreedharamurthy ,  Milind Kulkarni ,  Harold W. Korb

IPC: C30B30/04

CPC classification number: C30B15/305 ,  C30B29/06

Abstract: Controlling crystal growth in a crystal growing system is described. The crystal growing system includes a heated crucible including a semiconductor melt from which a monocrystalline ingot is grown according to a Czochralski and the ingot is grown on a seed crystal pulled from the melt. The method includes applying a cusped magnetic field to the melt by supplying an upper coil with a first direct current (IUDC) and supplying a lower coil with a second direct current (ILDC). The method also includes supplying the upper coil with a first alternating current (IUAC) and supplying the lower coil with a second alternating current (ILAC) to generate a time-varying magnetic field, wherein the time-varying magnetic field generates a pumping force in the semiconductor melt.

Abstract translation: 描述了在晶体生长系统中控制晶体生长。 晶体生长系统包括加热的坩埚，其包括半导体熔体，根据Czochralski从其中生长单晶锭，并且该晶锭在从熔体拉出的晶种上生长。 该方法包括通过向上部线圈提供第一直流电流（IUDC）并向下部线圈提供第二直流电流（ILDC），向熔体施加一个定位的磁场。 该方法还包括向上部线圈提供第一交流电流（IUAC）并且向下部线圈提供第二交流电流（ILAC）以产生时变磁场，其中时变磁场产生泵送力 半导体熔化。

公开(公告)号：US20120042002A1

公开(公告)日：2012-02-16

申请号：US12477821

申请日：2009-06-03

Applicant: Tony Paul Smith ,  Julian Hartley Cork ,  Tuan Long Pham ,  Milind Kulkarni ,  Sergejs Olhoviks ,  Vince Sethi ,  Anthony Brian Knife ,  Tarik Cherkaoui ,  Richard Alexander Hill

Inventor： Tony Paul Smith ,  Julian Hartley Cork ,  Tuan Long Pham ,  Milind Kulkarni ,  Sergejs Olhoviks ,  Vince Sethi ,  Anthony Brian Knife ,  Tarik Cherkaoui ,  Richard Alexander Hill

IPC: G06F15/16 ,  G06F17/30

CPC classification number: G06Q30/016 ,  G06F9/453

Abstract: A system and method for context driven centralized help is provided. A daemon application initiated on a workstation or mobile device is configured to intercept a help request received in connection with an active application when a pre-defined triggering event is invoked. The daemon application captures context corresponding to the current page or function in use with the active application and generates a corresponding information dataset pertaining to the captured context. The information dataset is transmitted to a remote site, configured to query a content database, to determine if help-related content has been previously associated with the captured context, wherein a positive determination of the existence of such an association results in the help-related content being retrieved and displayed on the workstation or mobile device.

Abstract translation: 提供了一种用于上下文驱动集中式帮助的系统和方法。 在工作站或移动设备上启动的守护程序应用被配置为当调用预定义的触发事件时拦截与活动应用相关联的帮助请求。 守护程序应用程序捕获与当前页面或与当前应用程序一起使用的功能相对应的上下文，并生成与捕获的上下文有关的对应信息数据集。 信息数据集被发送到远程站点，被配置为查询内容数据库，以确定帮助相关内容之前是否已经与所捕获的上下文相关联，其中存在这种关联的肯定确定导致帮助相关 内容被检索并显示在工作站或移动设备上。

公开(公告)号：US20110250366A1

公开(公告)日：2011-10-13

申请号：US13084243

申请日：2011-04-11

Applicant: Gianluca Pazzaglia ,  Matteo Fumagalli ,  Milind Kulkarni

Inventor： Gianluca Pazzaglia ,  Matteo Fumagalli ,  Milind Kulkarni

IPC: C23C16/02 ,  B23P11/00 ,  B05D3/06

CPC classification number: C23C16/46 ,  C01B33/035 ,  C23C16/4418 ,  F27B11/00 ,  Y10T29/49826

Abstract: A bell jar for a Siemens reactor of the type used to deposit polycrystalline silicon on a plurality of heated silicon rods via chemical vapor deposition process. The bell jar includes a thermally conductive inner wall having an interior surface at least partially defining an interior space adapted to receive the plurality of heated silicon rods therein. A thermal radiation shield is in the interior space generally adjacent to and in opposing relationship with the interior surface of the inner wall. The thermal radiation shield is substantially opaque to thermal radiation emitted from the plurality of heated silicon rods in the interior space of the bell jar.

Abstract translation: 用于通过化学气相沉积工艺在多个加热的硅棒上沉积多晶硅的类型的西门子反应器的钟罩。 钟罩包括导热内壁，其具有至少部分地限定适于在其中容纳多个加热的硅棒的内部空间的内表面。 热辐射屏蔽件在内部空间中大体上与内壁的内表面相邻并且与内壁的内表面相反。 热辐射屏蔽对于从钟罩的内部空间中的多个加热的硅棒发射的热辐射基本上是不透明的。

公开(公告)号：US20100031870A1

公开(公告)日：2010-02-11

申请号：US12537066

申请日：2009-08-06

Applicant: Hariprasad Sreedharamurthy ,  Milind Kulkarni ,  Harold W. Korb

Inventor： Hariprasad Sreedharamurthy ,  Milind Kulkarni ,  Harold W. Korb

IPC: C30B15/20

CPC classification number: C30B15/305 ,  C30B29/06

Abstract: Controlling crystal growth in a crystal growing system is described. The crystal growing system includes a heated crucible including a semiconductor melt from which a monocrystalline ingot is grown according to a Czochralski and the ingot is grown on a seed crystal pulled from the melt. The method includes applying a cusped magnetic field to the melt by supplying an upper coil with a first direct current (IUDC) and supplying a lower coil with a second direct current (ILDC). The method also includes supplying the upper coil with a first alternating current (IUAC) and supplying the lower coil with a second alternating current (ILAC) to generate a time-varying magnetic field, wherein the time-varying magnetic field generates a pumping force in the semiconductor melt.

Abstract translation: 描述了在晶体生长系统中控制晶体生长。 晶体生长系统包括加热的坩埚，其包括半导体熔体，根据Czochralski从其中生长单晶锭，并且该晶锭在从熔体拉出的晶种上生长。 该方法包括通过向上部线圈提供第一直流电流（IUDC）并向下部线圈提供第二直流电流（ILDC），向熔体施加一个定位的磁场。 该方法还包括向上部线圈提供第一交流电流（IUAC）并且向下部线圈提供第二交流电流（ILAC）以产生时变磁场，其中时变磁场产生泵送力 半导体熔化。

公开(公告)号：US20080126596A1

公开(公告)日：2008-05-29

申请号：US11566720

申请日：2006-12-05

Applicant: Catherine Yuan ,  Vikas Mittal ,  Raghu Rajan ,  Yanbing Li ,  Milind Kulkarni

Inventor： Catherine Yuan ,  Vikas Mittal ,  Raghu Rajan ,  Yanbing Li ,  Milind Kulkarni

IPC: G06F13/00

CPC classification number: G06F13/4081

Abstract: Determining an active/standby state for an interface unit includes determining an entity active/standby state for each entity of one or more entities of the interface unit. If each entity active/standby state is standby, then an aggregated active/standby state of the interface unit is established to be standby.

Abstract translation: 确定接口单元的主动/待机状态包括为接口单元的一个或多个实体的每个实体确定实体主动/待机状态。 如果每个实体主备状态为待机状态，则建立接口单元的聚合主备状态待机。

公开(公告)号：US20080024949A1

公开(公告)日：2008-01-31

申请号：US11682634

申请日：2007-03-06

Applicant: Milind Kulkarni ,  Rashmi V. Varma

Inventor： Milind Kulkarni ,  Rashmi V. Varma

IPC: H02H3/22

CPC classification number: G06F11/1415 ,  G06F11/0709 ,  G06F11/076

Abstract: A method for automatically attempting to recover equipment from a transient fault includes detecting a fault associated with the equipment in a node in a communications network, determining whether the fault associated with the equipment is transient, if the fault is transient automatically attempting to recover the equipment from the transient fault without user intervention, if the recovery attempt is successful monitoring the equipment for a pre-determined period of time to determine if the fault recurs, and if the fault recurs automatically re-attempting to recover the equipment from the fault until the fault does not recur in the pre-determined period of time or until a pre-determined number of attempts to recover the equipment have been performed.

Abstract translation: 一种用于自动尝试从瞬态故障中恢复设备的方法包括检测与通信网络中的节点中的设备相关联的故障，确定与设备相关联的故障是否是瞬态的，如果故障是瞬时自动地尝试恢复设备 从没有用户干预的瞬态故障中，如果恢复尝试成功监视设备预定的时间段，以确定故障是否重现，并且如果故障自动重新尝试从故障恢复设备，直到 故障不会在预定的时间段内重复出现，或者直到已经执行了恢复设备的预定次数。

公开(公告)号：US06294469B1

公开(公告)日：2001-09-25

申请号：US09512111

申请日：2000-02-24

Applicant: Milind Kulkarni ,  AnKur Desai

Inventor： Milind Kulkarni ,  AnKur Desai

IPC: H01L21302

CPC classification number: H01L21/3065 ,  H01L21/02019 ,  H01L21/30604

Abstract: A method of processing a semiconductor wafer sliced from a single-crystal ingot and having front and back surfaces and a peripheral edge comprises the step of plasma jet etching the wafer to reduce the sub-surface wafer damage. The method further comprises high-gloss etching the wafer by subjecting the wafer to a high-gloss etchant that smooths the wafer such that surface roughness and nonspecularly reflected light are reduced. Plasma assisted chemical etching (PACE) is performed on the wafer to improve the flatness and the thickness uniformity of the wafer. The wafer is final polished to further reduce surface roughness and nonspecularly reflected light.

Abstract translation: 一种处理从单晶锭切片并具有前表面和后表面以及周边边缘的半导体晶片的方法包括等离子体喷射蚀刻晶片以减少次表面晶片损坏的步骤。 该方法还包括通过使晶片经受平滑晶片的高光泽蚀刻剂使得表面粗糙度和非特定反射光减小而对晶片进行高光泽蚀刻。 在晶片上执行等离子体辅助化学蚀刻（PACE）以改善晶片的平坦度和厚度均匀性。 最后研磨晶圆以进一步降低表面粗糙度和非特异反射光。

公开(公告)号：US07664980B2

公开(公告)日：2010-02-16

申请号：US11682634

申请日：2007-03-06

Applicant: Milind Kulkarni ,  Rashmi V. Varma

Inventor： Milind Kulkarni ,  Rashmi V. Varma

IPC: G06F11/00

CPC classification number: G06F11/1415 ,  G06F11/0709 ,  G06F11/076

Abstract: A method for automatically attempting to recover equipment from a transient fault includes detecting a fault associated with the equipment in a node in a communications network, determining whether the fault associated with the equipment is transient, if the fault is transient automatically attempting to recover the equipment from the transient fault without user intervention, if the recovery attempt is successful monitoring the equipment for a pre-determined period of time to determine if the fault recurs, and if the fault recurs automatically re-attempting to recover the equipment from the fault until the fault does not recur in the pre-determined period of time or until a pre-determined number of attempts to recover the equipment have been performed.

Abstract translation: 一种用于自动尝试从瞬态故障中恢复设备的方法包括检测与通信网络中的节点中的设备相关联的故障，确定与设备相关联的故障是否是瞬态的，如果故障是瞬时自动地尝试恢复设备 从没有用户干预的瞬态故障中，如果恢复尝试成功监视设备预定的时间段，以确定故障是否重现，并且如果故障自动重新尝试从故障恢复设备，直到 故障不会在预定的时间段内重复出现，或者直到已经执行了恢复设备的预定次数。

公开(公告)号：US20060005761A1

公开(公告)日：2006-01-12

申请号：US11145626

申请日：2005-06-06

Applicant: Milind Kulkarni ,  Vijay Nithiananthan ,  Lee Ferry ,  JaeWoo Ryu ,  JinYong Uhm ,  Steven Kimbel ,  ChangBum Kim ,  Joseph Holzer ,  Richard Schrenker ,  KangSeon Lee

Inventor： Milind Kulkarni ,  Vijay Nithiananthan ,  Lee Ferry ,  JaeWoo Ryu ,  JinYong Uhm ,  Steven Kimbel ,  ChangBum Kim ,  Joseph Holzer ,  Richard Schrenker ,  KangSeon Lee

IPC: C30B15/00 ,  C30B15/30 ,  C30B21/06 ,  C30B27/02

CPC classification number: C30B29/06 ,  C30B15/22 ,  C30B15/30 ,  Y10T117/1008 ,  Y10T117/1052

Abstract: The present invention provides a methods and system for producing semiconductor grade single crystals that are substantially free of undesirable agglomerated defects. A vacancy/interstial (V/I) boundary simulator analyzes various melt-solid interface shapes to predict a corresponding V/I transition curve for each of the various melt-solid interface shapes. A target melt-solid interface shape corresponding to a substantially flat V/I curve is identified for each of a plurality of axial positions along the length of the crystal. Target operating parameters to achieve each of the identified melt-solid interface shapes are stored in a melt-solid interfaced shape profile. A control system is responsive to the stored profile to generate one or more control signals to control one or more output devices such that the melt-solid interfaced shape substantially follows the target shapes as defined by the profile during crystal growth.

Abstract translation: 本发明提供了一种生产半导体级单晶的方法和系统，其基本上没有不希望的附聚缺陷。 空位/间隙（V / I）边界模拟器分析各种熔体 - 固体界面形状，以预测各种熔体 - 固体界面形状的相应V / I过渡曲线。 对于沿着晶体长度的多个轴向位置中的每一个，识别对应于基本上平坦的V / I曲线的目标熔体 - 固体界面形状。 实现每个识别的熔体 - 固体界面形状的目标操作参数被存储在熔体 - 固体界面形状轮廓中。 控制系统响应于存储的轮廓以产生一个或多个控制信号以控制一个或多个输出装置，使得熔体 - 固体接合形状基本上遵循在晶体生长期间由轮廓限定的目标形状。