发明申请
US20050048742A1 Multiple grow-etch cyclic surface treatment for substrate preparation
审中-公开
用于底物制备的多次生长蚀刻循环表面处理
- 专利标题： Multiple grow-etch cyclic surface treatment for substrate preparation
- 专利标题（中）： 用于底物制备的多次生长蚀刻循环表面处理
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申请号： US10647534申请日： 2003-08-26
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公开(公告)号： US20050048742A1公开(公告)日： 2005-03-03
- 发明人: Anthony Dip , Pradip Roy , Raymond Joe
- 申请人： Anthony Dip , Pradip Roy , Raymond Joe
- 申请人地址： JP Tokyo
- 专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人地址： JP Tokyo
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L21/306 ; H01L21/302 ; H01L21/322 ; H01L21/461
摘要：
This invention provides a method for modifying the surface properties of a Si or Si alloy substrate by performing repeated etch-grow cycles of thermal oxide to yield a more defect free substrate with a more uniform nucleating surface which provides an improved interface for dielectric formation. Additionally, this method of processing does not expose the substrate to ambient atmosphere and preserves the improved surface until subsequent processing steps are performed.