Invention Application
- Patent Title: Semiconductor devices and methods of manufacturing such semiconductor devices
- Patent Title (中): 半导体器件及其制造方法
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Application No.: US10964963Application Date: 2004-10-14
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Publication No.: US20050048784A1Publication Date: 2005-03-03
- Inventor: Qing-Tang Jiang , Changming Jin , J. Luttmer
- Applicant: Qing-Tang Jiang , Changming Jin , J. Luttmer
- Main IPC: H01L21/3205
- IPC: H01L21/3205 ; H01L21/316 ; H01L21/768 ; H01L23/52 ; H01L21/8238
Abstract:
A method of manufacturing a semiconductor device includes the steps of providing a semiconductor substrate (202), forming a dielectric layer (204) over the semiconductor substrate (202), and etching a trench or a via (206) in the dielectric layer (204) to expose a portion of the surface of the semiconductor substrate (202). The method also includes the step of forming a conductive layer (212, 220) within in the trench or the via (206). The method further includes the steps of polishing a portion of the conductive layer (220) and annealing the conductive layer (212, 220) at a predetermined temperature. Moreover, the conductive layer (212, 220) also includes a dopant, and the dopant diffuses substantially to the surface of the top side of the conductive layer (212, 220) to form a dopant oxide layer (212a, 220a) when the conductive layer (212, 220) is annealed at the predetermined temperature and the dopant is exposed to oxygen.
Public/Granted literature
- US07187080B2 Semiconductor device with a conductive layer including a copper layer with a dopant Public/Granted day:2007-03-06
Information query
IPC分类:
