发明申请
US20050052261A1 Thin film resonator, method for making thin film resonator and filter having thin film resonators
有权
薄膜谐振器，制造薄膜谐振器的方法和具有薄膜谐振器的滤波器
- 专利标题： Thin film resonator, method for making thin film resonator and filter having thin film resonators
- 专利标题（中）： 薄膜谐振器，制造薄膜谐振器的方法和具有薄膜谐振器的滤波器
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申请号： US10936522申请日： 2004-09-09
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公开(公告)号： US20050052261A1公开(公告)日： 2005-03-10
- 发明人: Yong-seop Yoon , Yun-kwon Park , Hyung Choi
- 申请人： Yong-seop Yoon , Yun-kwon Park , Hyung Choi
- 专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 优先权： KR2003-63389 20030909
- 主分类号： H01L41/09
- IPC分类号： H01L41/09 ; H01L41/22 ; H03H3/02 ; H03H3/04 ; H03H9/17 ; H03H9/24 ; H03H9/54 ; H03H9/58
摘要：
A thin film resonator having a membrane layer formed on top of a substrate, a lower electrode formed on part of the top surface of the membrane layer, a piezoelectric layer formed on top of the lower electrode, an upper electrode formed on top of the piezoelectric layer, and a mass loading layer interposed between the lower electrode and the membrane layer and having a predetermined mass. This structure enables precise adjustment of the resonant frequency of the thin film resonator, thereby providing a more precise filter.
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