发明申请
US20050054156A1 CAPACITOR AND FABRICATION METHOD USING ULTRA-HIGH VACUUM CVD OF SILICON NITRIDE
审中-公开
使用氮化硅超高真空CVD的电容器和制造方法
- 专利标题： CAPACITOR AND FABRICATION METHOD USING ULTRA-HIGH VACUUM CVD OF SILICON NITRIDE
- 专利标题（中）： 使用氮化硅超高真空CVD的电容器和制造方法
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申请号： US10605128申请日： 2003-09-10
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公开(公告)号： US20050054156A1公开(公告)日： 2005-03-10
- 发明人: John Bruley , Kevin Chan , Paul Kirsch , Dae-Gyu Park
- 申请人： John Bruley , Kevin Chan , Paul Kirsch , Dae-Gyu Park
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： C23C16/34
- IPC分类号： C23C16/34 ; H01L21/02 ; H01L21/8242
摘要：
A method of fabricating a capacitor including an ultra-high vacuum chemical vapor deposition (UHVCVD) step to generate a top-side barrier film layer including silicon nitride at monolayer quantities, and a capacitor so formed, are disclosed. The UHVCVD step allows silicon nitride to be deposited with monolayer level control, and is more successful at placing the nitrogen near the top surface independent of the base film thickness. The resulting capacitor exhibits thermal stability and meets leakage targets after, for example, an approximately 1050° C. thermal treatment. In addition, the UHVCVD nitride step allows for an in situ thermal clean and simpler process control because the reaction is thermally driven.