发明申请
- 专利标题： Semiconductor constructions, and methods of forming capacitor devices
- 专利标题（中）： 半导体结构和形成电容器器件的方法
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申请号： US10733181申请日： 2003-12-10
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公开(公告)号： US20050054159A1公开(公告)日： 2005-03-10
- 发明人: H. Manning , Thomas Graettinger , Marsela Pontoh
- 申请人： H. Manning , Thomas Graettinger , Marsela Pontoh
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L21/3205 ; H01L21/334 ; H01L21/8242 ; H01L27/02 ; H01L27/108 ; H01L21/8234
摘要：
The invention includes semiconductor constructions, and also includes methods of forming pluralities of capacitor devices. An exemplary method of the invention includes forming conductive storage node material within openings in an insulative material to form conductive containers. A retaining structure lattice is formed in physical contact with at least some of the containers, and subsequently the insulative material is removed to expose outer surfaces of the containers. The retaining structure can alleviate toppling or other loss of structural integrity of the container structures. The electrically conductive containers correspond to first capacitor electrodes. After the outer sidewalls of the containers are exposed, dielectric material is formed within the containers and along the exposed outer sidewalls. Subsequently, a second capacitor electrode is formed over the dielectric material. The first and second capacitor electrodes, together with the dielectric material, form a plurality of capacitor devices.
公开/授权文献
- US07125781B2 Methods of forming capacitor devices 公开/授权日：2006-10-24
信息查询
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