发明申请
US20050057990A1 Read only memory devices with independently precharged virtual ground and bit lines 有权
只读存储器件,具有独立预充电的虚拟接地和位线

  • 专利标题: Read only memory devices with independently precharged virtual ground and bit lines
  • 专利标题(中): 只读存储器件,具有独立预充电的虚拟接地和位线
  • 申请号: US10910669
    申请日: 2004-08-03
  • 公开(公告)号: US20050057990A1
    公开(公告)日: 2005-03-17
  • 发明人: Yong-jae ChooIn-gyu Park
  • 申请人: Yong-jae ChooIn-gyu Park
  • 优先权: KR2002-41975 20020718
  • 主分类号: G11C7/00
  • IPC分类号: G11C7/00 G11C7/12 G11C17/12
Read only memory devices with independently precharged virtual ground and bit lines
摘要:
Read only memory(ROM) integrated circuit devices include a ROM cell block. A plurality of virtual ground lines and bit lines are coupled to the ROM cell block. A precharge circuit, including a virtual ground line precharge controller, virtual ground line precharging unit, bit line precharge controller and bit line precharging unit, independently controls timing of precharging the virtual ground lines and the bit lines. The precharge circuit may be configured to deactivate precharging of the virtual ground lines before deactivating precharging of the bit lines. Precharging of the virtual ground lines may be deactivated substantially concurrently with activation of discharging of the virtual ground lines.
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